參數(shù)資料
型號(hào)： KM416S1120D
廠商： Electronic Theatre Controls, Inc.
英文描述： 512K x 16bit x 2 Banks Synchronous DRAM LVTTL
中文描述： 為512k × 16位× 2銀行同步DRAM LVTTL
文件頁(yè)數(shù)： 3/43頁(yè)
文件大小： 1131K
代理商： KM416S1120D
KM416S1120D
CMOS SDRAM
- 3 -
Rev. 1.4 (Jun. 1999)
The KM416S1120D is 16,777,216 bits synchronous high data
rate Dynamic RAM organized as 2 x 524,288 words by 16 bits,
fabricated with SAMSUNG
′
s high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock I/O transactions are possible on every clock
cycle. Range of operating frequencies, programmable burst
length and programmable latencies allow the same device to be
useful for a variety of high bandwidth, high performance mem-
ory system applications.
3.3V power supply
LVTTL compatible with multiplexed address
Dual banks operation
MRS cycle with address key programs
-. CAS Latency ( 2 & 3)
-. Burst Length (1, 2, 4, 8 & full page)
-. Burst Type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the system
clock
Burst Read Single-bit Write operation
DQM for masking
Auto & self refresh
15.6us refresh duty cycle (2K/32ms)
GENERAL DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
512K x 16Bit x 2 Banks Synchronous DRAM
ORDERING INFORMATION
Part NO.
MAX Freq.
183MHz
166MHz
143MHz
125MHz
100MHz
Interface Package
KM416S1120DT-G/FC
KM416S1120DT-G/F6
KM416S1120DT-G/F7
KM416S1120DT-G/F8
KM416S1120DT-G/F10
LVTTL
50
TSOP(II)
Samsung Electronics reserves the right to
change products or specification without
notice.
*
Bank Select
Data Input Register
512K x 16
512K x 16
S
O
I
Column Decoder
Latency & Burst Length
Programming Register
A
R
R
R
C
L
L
LCKE
LRAS
LCBR
LWE
LDQM
CLK
CKE
CS
RAS
CAS
WE
L(U)DQM
LWE
LDQM
DQi
CLK
ADD
LCAS
LWCBR
Timing Register
相關(guān)PDF資料
PDF描述
KM416S16230A 4M x 16Bit x 4 Banks Synchronous DRAM(4M x 16位 x4組同步動(dòng)態(tài)RAM)
KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM
KM416S4030CT-F10 1M x 16Bit x 4 Banks Synchronous DRAM
KM416S4030CT-F7 1M x 16Bit x 4 Banks Synchronous DRAM
KM416S4030CT-F8 1M x 16Bit x 4 Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM416S1120DT-G/F10 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL
KM416S1120DT-G/F6 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL
KM416S1120DT-G/F7 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL
KM416S1120DT-G/F8 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL
KM416S1120DT-G/FC 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL
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