- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374354 > KM416V4004B (SAMSUNG SEMICONDUCTOR CO. LTD.) 4M x 16bit CMOS Dynamic RAM with Extended Data Out(4M x 16位 CMOS動態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) PDF資料下載
參數(shù)資料
| 型號： | KM416V4004B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 16bit CMOS Dynamic RAM with Extended Data Out(4M x 16位 CMOS動態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) |
| 中文描述： | 4米× 16位的擴(kuò)展數(shù)據(jù)輸出的CMOS動態(tài)RAM（4米× 16位的CMOS動態(tài)隨機(jī)存儲器（帶擴(kuò)展數(shù)據(jù)輸出）） |
| 文件頁數(shù)： | 9/36頁 |
| 文件大?。?/td> | 793K |
| 代理商： | KM416V4004B |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁當(dāng)前第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁
KM416V4004B,
KM416V4104B
CMOS DRAM
t
CWL
is specified from W falling edge to the earlier CAS rising edge.
t
CSR
is referenced to the earlier CAS falling edge before RAS transition low.
t
CHR
is referenced to the later CAS rising edge after RAS transition low.
t
DS
is specified for the earlier CAS falling edge and
t
DH
is specified by the later CAS falling edge in early write cycle.
t
ASC
≥
6ns, Assume t
T
= 2.0ns
If RAS goes high before CAS high going, the open circuit condition of the output is achieved by CAS high going. If CAS goes
high before RAS high going, the open circuit condition of the output is achieved by RAS high going.
If
t
RASS
≥
100us, then RAS precharge time must use
t
RPS
instead of
t
RP
.
For RAS-only refresh and burst CAS-before-RAS refresh mode, 4096(4K/8K) cycles of burst refresh must be executed within
64ms before and after self refresh, in order to meet refresh specification.
For distributed CAS-before-RAS with 15.6us interval CAS-before-RAS refresh should be executed with in 15.6us immediately
before and after self refresh in order to meet refresh specification.
t
CSR
t
CHR
RAS
LCAS
UCAS
t
DS
t
DH
LCAS
UCAS
DQ0 ~ DQ15
Din
22.
21.
20.
19.
18.
17.
16.
23.
24.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM416V4004C | 4M x 16bit CMOS Dynamic RAM with Extended Data Out(4M x 16位 CMOS動態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) |
| KM416V4100B | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode(4M x 16位 CMOS動態(tài)RAM(帶快速頁模式)) |
| KM41V4000D | RES,Film,0.33Ohms,250WV,200ppm-TC,4112-Case RoHS Compliant: Yes |
| KM4211IM8TR3 | Dual, 0.2mA, Low Cost, +2.7V & +5V, 35MHz Rail-to-Rail Amp |
| KM4211 | Dual, 0.2mA, Low Cost, +2.7V & +5V, 35MHz Rail-to-Rail Amp |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM416V4004C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| KM416V4100B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| KM416V4100C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| KM416V4104B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| KM416V4104C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。