參數(shù)資料
型號(hào)： KM416V4100B
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 4M x 16bit CMOS Dynamic RAM with Fast Page Mode(4M x 16位 CMOS動(dòng)態(tài)RAM(帶快速頁(yè)模式))
中文描述： 4米× 16位的快速頁(yè)面模式的CMOS動(dòng)態(tài)RAM（4米× 16位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器（帶快速頁(yè)模式））
文件頁(yè)數(shù)： 7/35頁(yè)
文件大小： 753K
代理商： KM416V4100B
KM416V4000B,
KM416V4100B
CMOS DRAM
TEST MODE CYCLE
Parameter
Symbol
-45
-5
-6
Units
Note
Min
Max
Min
Max
Min
Max
Random read or write cycle time
t
RC
85
95
115
ns
Read-modify-write cycle time
t
RWC
120
138
160
ns
Access time from RAS
t
RAC
50
55
65
ns
3,4,10,12
Access time from CAS
t
CAC
17
18
20
ns
3,4,5,12
Access time from column address
t
AA
28
30
35
ns
3,10,12
RAS pulse width
t
RAS
50
10K
55
10K
65
10K
ns
CAS pulse width
t
CAS
17
10K
18
10K
20
10K
ns
RAS hold time
t
RSH
17
18
20
ns
CAS hold time
t
CSH
50
55
65
ns
Column Address to RAS lead time
t
RAL
28
30
35
ns
CAS to W delay time
t
CWD
37
41
43
ns
7
RAS to W delay time
t
RWD
72
78
88
ns
7
Column Address to W delay time
t
AWD
48
53
58
ns
7
Fast Page mode cycle time
t
PC
36
40
45
ns
Fast Page mode read-modify-write cycle time
t
PRWC
75
81
90
ns
RAS pulse width (Fast page cycle)
t
RASP
50
200K
55
200K
65
200K
ns
Access time from CAS precharge
t
CPA
31
35
40
ns
3
OE access time
t
OEA
17
18
20
ns
OE to data delay
t
OED
17
18
18
ns
OE command hold time
t
OEH
17
18
20
ns
( Note 11 )
相關(guān)PDF資料
PDF描述
KM41V4000D RES,Film,0.33Ohms,250WV,200ppm-TC,4112-Case RoHS Compliant: Yes
KM4211IM8TR3 Dual, 0.2mA, Low Cost, +2.7V & +5V, 35MHz Rail-to-Rail Amp
KM4211 Dual, 0.2mA, Low Cost, +2.7V & +5V, 35MHz Rail-to-Rail Amp
KM4211IM8 Dual, 0.2mA, Low Cost, +2.7V & +5V, 35MHz Rail-to-Rail Amp
KM4211IC8 Multiconductor Cable; Number of Conductors:9; Conductor Size AWG:18; No. Strands x Strand Size:19 x 30; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper; Features:Unshielded RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM416V4100C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode
KM416V4104B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out
KM416V4104C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out
KM416V4104CS-45 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out
KM4170 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Low Cost, +2.7V & +5V, Rail-to-Rail I/O Amplifiers
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*