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參數(shù)資料
| 型號： | ZPSD813F1V |
| 英文描述： | Flash In System Programmable Mirocomputer Peripherals(閃速，在系統(tǒng)可編程微控制器外圍器件，1M位閃速存儲(chǔ)器，256K位EEPROM，16K位SRAM) |
| 中文描述： | Flash在系統(tǒng)可編程Mirocomputer外設(shè)（閃速，在系統(tǒng)可編程微控制器外圍器件，100萬位閃速存儲(chǔ)器，256K位的EEPROM，16K的位的SRAM） |
| 文件頁數(shù)： | 20/130頁 |
| 文件大小： | 650K |
| 代理商： | ZPSD813F1V |
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PSD813F Famly
Prelimnary
16
9.1.1.1 Memory Block Selects
The decode PLD in the PSD813F generates the chip selects for all the internal memory
blocks (refer to the PLD section). Each of the eight Flash memory sectors have a
Flash Select signal (FS0-FS7) which can contain up to three product terms. Each of the
optional four EEPROM or Flash Boot memory sectors have a Select signal (EES0-3 or
CSBOOT0-3) which can contain up to three product terms. Having three product terms for
each sector select signal allows a given sector to be mapped in different areas of system
memory. When using a microcontroller with separate Program and Data space, these
flexible select signals allow dynamic re-mapping of sectors from one space to the other.
9.1.1.2 The Ready/Busy Pin (PC3)
Pin PC3 can be used to output the Ready/Busy status of the PSD813F. The output on the
pin will be a ‘0’ (Busy) when Flash or EEPROM memory blocks are being written to,
or
when the Flash memory block is being erased. The output will be a ‘1’ (Ready) when no
write or erase operation is in progress.
9.1.1.3 Memory Operation
The main Flash and optional EEPROM or Flash Boot memories are addressed through
the microcontroller interface on the PSD813F device. The microcontroller can access these
memories in one of two ways:
J
The microcontroller can execute a typical bus write or read
operation
just as it would
if accessing a RAM or ROM device using standard bus cycles.
J
The microcontroller can execute a specific
instruction
that consists of several write
and read operations. This involves writing specific data patterns to special addresses
within the Flash or EEPROM to invoke an embedded algorithm. These instructions are
summarized in Table 9.
Typically, Flash memory can be read by the microcontroller using read operations, just as it
would read a ROM device. However, Flash memory can only be erased and programmed
with specific instructions. For example, the microcontroller cannot write a single byte directly
to Flash memory as one would write a byte to RAM. To program a byte into Flash memory,
the microcontroller must execute a program instruction sequence, then test the status
of the programming event. This status test is achieved by a read operation or polling the
Rdy/Busy pin (PC3).
The Flash memory can also be read by using special instructions to retrieve particular Flash
device information (sector protect status and ID).
The EEPROM is a bit different. Data can be written to EEPROM memory using write
operations, like writing to a RAM device, but the status of each write event must be checked
by the microcontroller. A write event can be one to 64 contiguous bytes. The status test is
very similar to that used for Flash memory (read operation or Rdy/Busy). Optionally, the
EEPROM memory may be put into a Software Data Protect (SDP) mode where it requires
instructions, rather than operations, to alter its contents. SDP mode makes writing to
EEPROM much like writing to Flash memory.
The
PSD813F
Functional
Blocks
(cont.)
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相關(guān)代理商/技術(shù)參數(shù) |
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| ZPSD813F1V-15J | 制造商:WSI 功能描述: |
| ZPSD813F1V-15J-CC790 | 制造商:STMicroelectronics 功能描述:Flash In SystemProgrammable Mirocomputer Peripherals |
| ZPSD813F1V-20J | 制造商:WSI 功能描述: |
| ZPSD813F2-12JI | 制造商:WSI 功能描述: 制造商:WSI 功能描述:1M X 1 FLASH, 27 I/O, PIA-GENERAL PURPOSE, PQCC52 |
| ZPSD813F2-12UI | 制造商:WSI 功能描述: 制造商:WSI 功能描述:1M X 1 FLASH, 27 I/O, PIA-GENERAL PURPOSE, PQFP64 |
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