參數(shù)資料
型號(hào)： ZPSD813F1V
英文描述： Flash In System Programmable Mirocomputer Peripherals(閃速，在系統(tǒng)可編程微控制器外圍器件，1M位閃速存儲(chǔ)器，256K位EEPROM，16K位SRAM)
中文描述： Flash在系統(tǒng)可編程Mirocomputer外設(shè)（閃速，在系統(tǒng)可編程微控制器外圍器件，100萬位閃速存儲(chǔ)器，256K位的EEPROM，16K的位的SRAM）
文件頁數(shù)： 107/130頁
文件大小： 650K
代理商： ZPSD813F1V
Preliminary
PSD813F Family
103
Microcontroller Interface – ZPSD813FV AC/DC Parameters
(2.7 V to 3.6 V Versions)
Symbol
Parameter
Min
Typ
Max
Unit
Flash Program
8.5
sec
Flash Bulk Erase (Preprogrammed) (Note 1)
3
30
sec
Flash Bulk Erase (Not Preprogrammed)
10
sec
t
WHQV3
t
WHQV2
t
WHQV1
Sector Erase (Preprogrammed)
1
30
sec
Sector Erase (Not Preprogrammed)
2
sec
Byte Program
10
1200
μs
Program/Erase Cycles (Per Sector)
100,000
cycles
t
WHWLO
Sector Erase Time-Out
100
μs
Flash Program, Write and Erase Times
(2.7 V to 3.6 V Versions)
-15
-20
Symbol
Parameter
Conditions
Min
Max
Min
Max
Unit
t
ISCCF
t
ISCCH
t
ISCCL
t
ISCCF-P
t
ISCCH-P
t
ISCCL-P
t
ISCPSU
t
ISCPH
t
ISCPCO
t
ISCPZV
t
ISCPVZ
TCK Clock Frequency (except for PLD)
TCK Clock High Time
TCK Clock Low Time
TCK Clock Frequency (for PLD only)
TCK Clock High Time (for PLD only)
TCK Clock Low Time (for PLD only)
ISC Port Set Up Time
ISC Port Hold Up Time
ISC Port Clock to Output
ISC Port High-Impedance to Valid Output
ISC Port Valid Output to High-Impedance
(Note 1)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
(Note 2)
10
9
MHz
ns
ns
MHz
ns
ns
ns
ns
ns
ns
ns
45
45
51
51
2
2
240
240
13
5
240
240
15
5
36
36
36
40
40
40
ISC Timing
(2.7 V to 3.6 V Versions)
NOTES:
1. Programmed to all zeros before erase.
Symbol
Parameter
Min
Typ
Max
Unit
t
EEHWL
t
BLC
t
WCB
t
WCP
Write Protect After Power Up
5
msec
EEPROM Byte Load Cycle Timing (Note 1)
0.2
120
μsec
EEPROM Byte Write Cycle Time
4
10
msec
EEPROM Page Write Cycle Time (Note 2)
6
30
msec
Program/Erase Cycles (Per Sector)
10,000
cycles
EEPROM Write Times
(2.7 V to 3.6 V Versions)
NOTES:
1. If the maximum time has elapsed between successive writes to an EEPROM page, the transfer of this data to EEPROM cells will
begin. Also, bytes cannot be written (loaded) to a page any faster than the indicated minimum type.
2. These specifications are for writing a page to EEPROM cells.
NOTES:
1. For “non-PLD” programming, erase or in ISC by-pass mode.
2. For program or erase PLD only.
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