P17
* Display Memory Interface (82 pins)
Symble Type Drive Pin Number Active Function
AA9
AA[8:0]
I/O
I/O/U
4maR
4maR
CA[9:8]
CA[7:0]
MAD[15:0]
I/O
O
I/O/U
4maR
4maR
4maR
MBD[15:0]
I/O
4maR
MCD[15:0]
I/O
4maR
RASA*
O
4maR
RASB*
O
4maR
RASC*
I/O
4maR
CASAL*/WEAL*
O
4maR
CASAH*/CASA*
O
4maR
CASBL*/WEBL*
O
4maR
CASBH*/CASB*
O
4maR
CASCL*/WEAL*I/O
4maR
CASCH*/CASC*
I/O
4maR
WEA*/WEAH*
O
4maR
WEB*/WEBH*
O
4maR
WEC*/WECH*
O
4maR
OEAB*
O
8maR
OEC*
I/O
4maR
True
True
True
True
True
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Display memory address bit 9 to 0 for DRAMs
A and B. A pull-high mechanism gives a default
high value in those configuration data.
Display memory address bit 9 to 0 for DRAMs
C.
These pins are used to transfer data between the
TP6508 and display memory, DRAM A. A pull-
high mechanism gives a default high value in
those configuration data.
These pins are used to transfer data between the
TP6508 and display memory, DRAM B.
These pins are used to transfer data between the
TP6508 and frame buffer memory, DRAM C.
When a frame buffer DRAM isn't requireed, this
bus may optionall be used to input up to 24 bits
of RGB data from the external PC-Video
subsystem(device).
Row address strobe for latching 10-bit row ad-
dress signal into display memory, DRAM A..
Row address strobe for latching 10-bit row ad-
dress signal into display memory, DRAM B..
Row address strobe for latching 10-bit row ad-
dress signal into display memory, DRAM C..
Column address strobe for DRAM A lower byte
in dual-CAS application. In dual-WE applica-
tion, it is used as write enable signal for DRAM
A lower byte.
Column address strobe for DRAM A upper
bytein dual-CAS application.
Column address strobe for DRAM B lower
bytein dual-CAS application.
Column address strobe for DRAM B upper
byte.in dual-CAS application.
Column address strobe for DRAM C lower
bytein dual-CAS application.
Column address strobe for DRAM C upper
bytein dual-CAS application.
Write enable signal for DRAM A in dual-CAS
application. In dual-WE application, it is used
as write enable signal for DRAM A upper byte.
Write enable signal for DRAM Bin dual-CAS
application.
Write enable signal for DRAM Cin dual-CAS
application.
Data output enable signal for DRAM A and
DRAM B.
Data output enable signal for DRAM C.
154,153,152,151,150,
149,148,147,146,145
99,98,97,96,95,
94,93,92,91,90
177,176,175,174,173,
172,171,170,169,168,
167,166,165,164,163
162
144,143,141,140,138,
137,136,135,134,133,
132,131,130,129,128,
127
122,121,120,119,118,
117,116,115,114,113,
112,111,110,109,107,
106
156
123
101
160
159
126
125
104
103
157
124
102
155
100