參數(shù)資料
型號(hào)： W948D6FBHX6G
廠商： WINBOND ELECTRONICS CORP
元件分類： DRAM
英文描述： 8M X 16 DDR DRAM, 5 ns, PBGA60
封裝： 8 X 9 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-60
文件頁數(shù)： 58/60頁
文件大?。?/td> 1147K
代理商： W948D6FBHX6G
W948D6FB / W948D2FB
256Mb Mobile LPDDR
Publication Release Date : May, 24, 2011
- 7 -
Revision A01-003
SIGNAL NAME
TYPE
FUNCTION
DESCRIPTION
CKE
Input
Clock Enable
CKE HIGH activates, and CKE LOW deactivates internal clock
signals, and device input buffers and output drivers. Taking CKE
LOW provides PRECHARGE, POWER DOWN and SELF
REFRESH operation (all banks idle), or ACTIVE POWER DOWN
(row ACTIVE in any bank). CKE is synchronous for all functions
except for SELF REFRESH EXIT, which is achieved
asynchronously. Input buffers, excluding CK,
CK and CKE, are
disabled during power down and self refresh mode which are
contrived for low standby power consumption.
LDQS, UDQS
(x16);
DQS0~DQS3
(x32)
I/O
Data Strobe
Output with read data, input with write data. Edge-aligned with
read data, centered with write data. Used to capture write data.
x16:
LDQS: DQ0~DQ7; UDQS: DQ8~DQ15.
x32:
DQS0: DQ0~DQ7; DQS1: DQ8~DQ15;
DQS2: DQ16~DQ23; DQS3: DQ24~DQ31.
VDD
Supply
Power
Power supply for input buffers and internal circuit.
VSS
Supply
Ground
Ground for input buffers and internal circuit.
VDDQ
Supply
Power for I/O
Buffer
Power supply separated from VDD, used for output drivers to
improve noise.
VSSQ
Supply
Ground for I/O
Buffer
Ground for output drivers.
NC
-
No Connect
No internal electrical connection is present.
4.2 Addressing Table
ITEM
256 Mb
Number of banks
4
Bank address pins
BA0,BA1
Auto precharge pin
A10/AP
X16
Row addresses
A0-A12
Column addresses
A0-A8
tREFI(s)
7.8
x32
Row addresses
A0-A11
Column addresses
A0-A8
tREFI(s)
15.6
相關(guān)PDF資料
PDF描述
WF128K32-120HC5 512K X 8 FLASH 5V PROM MODULE, 120 ns, CHIP66
WF128K32-90HM5 512K X 8 FLASH 5V PROM MODULE, 90 ns, CHIP66
WS128K32-35CJM 512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, CQCC68
WS512K32F-100G2Q 2M X 8 MULTI DEVICE SRAM MODULE, 100 ns, QMA68
WMS128K8L-100DJIE 128K X 8 STANDARD SRAM, 100 ns, CDSO36
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W949D2CB 制造商:WINBOND 制造商全稱:Winbond 功能描述:512Mb Mobile LPDDR
W949D2CBJX5E 功能描述:IC LPDDR SDRAM 512MBIT 90VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6
W949D2CBJX5ETR 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ
W949D2CBJX5I 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA
W949D2CBJX5I TR 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ, INDUST
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*