- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄202135 > W948D6FBHX6G (WINBOND ELECTRONICS CORP) 8M X 16 DDR DRAM, 5 ns, PBGA60 PDF資料下載
參數(shù)資料
| 型號(hào)： | W948D6FBHX6G |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | 8M X 16 DDR DRAM, 5 ns, PBGA60 |
| 封裝： | 8 X 9 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-60 |
| 文件頁數(shù)： | 16/60頁 |
| 文件大?。?/td> | 1147K |
| 代理商： | W948D6FBHX6G |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁當(dāng)前第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁
W948D6FB / W948D2FB
256Mb Mobile LPDDR
Publication Release Date : May, 24, 2011
- 23 -
Revision A01-003
Accessing Mode Register: Starts with registration of a MODE REGISTER SET command and ends when tMRD has been
met. Once tMRD is met, the
LPDDR SDRAM will be in an all banks idle state.
Precharging All: Starts with the registration of a PRECHARGE ALL command and ends when tRP is met. Once tRP is met,
the bank will be in the idle state.
10.
Not bank-specific; requires that all banks are idle and no bursts are in progress.
11.
Not bank-specific. BURST TERMINATE affects the most recent READ burst, regardless of bank.
12.
Requires appropriate DM masking.
13.
A WRITE command may be applied after the completion of the READ burst; otherwise, a BURST TERMINATE must be
used to end the READ prior to asserting a WRITE command.
6.11.6 Truth Table - Current State BANKn, Command to BANKn
CURRENT
STATE
CS
RAS
CAS
WE
COMMAND
ACTION
NOTES
Any
H
X
DESELECT
NOP or Continue previous Operation
L
H
NOP
NOP or Continue previous Operation
Idle
X
ANY
Any command allowed to bank m
Row Activating,
Active, or
Precharging
L
H
ACTIVE
Select and activate row
L
H
L
H
READ
Select column & start read burst
8
L
H
L
WRITE
Select column & start write burst
8
L
H
L
PRECHARGE
Precharge
Read with Auto
Precharge
disabled
L
H
ACTIVE
Select and activate row
L
H
L
H
READ
Select column & start new read burst
8
L
H
L
WRITE
Select column & start write burst
8,10
L
H
L
PRECHARGE
Precharge
Write with Auto
Precharge
disabled
L
H
ACTIVE
Select and activate row
L
H
L
H
READ
Select column & start read burst
8, 9
L
H
L
WRITE
Select column & start new write burst
8
L
H
L
PRECHARGE
Precharge
Read with Auto
Precharge
L
H
ACTIVE
Select and activate row
L
H
L
H
READ
Select column & start new read burst
5, 8
L
H
L
WRITE
Select column & start write burst
5, 8, 10
L
H
L
PRECHARGE
Precharge
Write with Auto
Precharge
L
H
ACTIVE
Select and activate row
L
H
L
H
READ
Select column & start read burst
5, 8
L
H
L
WRITE
Select column & start new write burst
5, 8
L
H
L
PRECHARGE
Precharge
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WF128K32-120HC5 | 512K X 8 FLASH 5V PROM MODULE, 120 ns, CHIP66 |
| WF128K32-90HM5 | 512K X 8 FLASH 5V PROM MODULE, 90 ns, CHIP66 |
| WS128K32-35CJM | 512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, CQCC68 |
| WS512K32F-100G2Q | 2M X 8 MULTI DEVICE SRAM MODULE, 100 ns, QMA68 |
| WMS128K8L-100DJIE | 128K X 8 STANDARD SRAM, 100 ns, CDSO36 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W949D2CB | 制造商:WINBOND 制造商全稱:Winbond 功能描述:512Mb Mobile LPDDR |
| W949D2CBJX5E | 功能描述:IC LPDDR SDRAM 512MBIT 90VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6 |
| W949D2CBJX5ETR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ |
| W949D2CBJX5I | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA |
| W949D2CBJX5I TR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ, INDUST |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。