參數(shù)資料
型號(hào)： W948D6FBHX6G
廠商： WINBOND ELECTRONICS CORP
元件分類： DRAM
英文描述： 8M X 16 DDR DRAM, 5 ns, PBGA60
封裝： 8 X 9 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-60
文件頁(yè)數(shù)： 20/60頁(yè)
文件大?。?/td> 1147K
代理商： W948D6FBHX6G
W948D6FB / W948D2FB
256Mb Mobile LPDDR
Publication Release Date : May, 24, 2011
- 27 -
Revision A01-003
A subsequent ACTIVE command to another bank can be issued while the first bank is being accessed, which results
in a reduction of total row-access overhead. The minimum time interval between two successive ACTIVE commands
on different banks is defined by tRRD.
The row remains active until a PRECHARGE command (or READ or WRITE command with Auto Precharge) is
issued to the bank.
A PRECHARGE (or READ with Auto Precharge or Write with Auto Precharge) command must be issued before
opening a different row in the same bank.
7.4.2 Bank Activation Command Cycle
NOP
ACT
NOP
RD/WR
Row
Col
BA x
BA y
tRCD
tRRD
= Don't Care
CK
Command
A0-An
BA0,BA1
7.5. Read
The READ command is used to initiate a burst read access to an active row, with a burst length as set in the Mode
Register. BA0 and BA1 select the bank, and the address inputs select the starting column location. The value of A10
determines whether or not Auto Pre-charge is used. If Auto Pre-charge is selected, the row being accessed will be
pre-charged at the end of the read burst; if Auto Pre-charge is not selected, the row will remain open for subsequent
accesses.
相關(guān)PDF資料
PDF描述
WF128K32-120HC5 512K X 8 FLASH 5V PROM MODULE, 120 ns, CHIP66
WF128K32-90HM5 512K X 8 FLASH 5V PROM MODULE, 90 ns, CHIP66
WS128K32-35CJM 512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, CQCC68
WS512K32F-100G2Q 2M X 8 MULTI DEVICE SRAM MODULE, 100 ns, QMA68
WMS128K8L-100DJIE 128K X 8 STANDARD SRAM, 100 ns, CDSO36
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W949D2CB 制造商:WINBOND 制造商全稱:Winbond 功能描述:512Mb Mobile LPDDR
W949D2CBJX5E 功能描述:IC LPDDR SDRAM 512MBIT 90VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6
W949D2CBJX5ETR 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ
W949D2CBJX5I 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA
W949D2CBJX5I TR 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ, INDUST
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*