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參數(shù)資料
| 型號： | W948D6FBHX6G |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | 8M X 16 DDR DRAM, 5 ns, PBGA60 |
| 封裝： | 8 X 9 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-60 |
| 文件頁數(shù)： | 13/60頁 |
| 文件大小： | 1147K |
| 代理商： | W948D6FBHX6G |
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W948D6FB / W948D2FB
256Mb Mobile LPDDR
Publication Release Date : May, 24, 2011
- 20 -
Revision A01-003
6.11.2 Truth Table - Commands
NAME (FUNCTION)
CS
RAS CAS
WE
BA
A10/AP ADDR NOTES
DESELECT (NOP)
H
X
2
NO OPERATION (NOP)
L
H
X
2
ACTIVE (Select Bank and activate row)
L
H
Valid
Row
READ (Select bank and column and start read burst)
L
H
L
H
Valid
L
Col
READ with AP (Read Burst with Auto Precharge)
L
H
L
H
Valid
H
Col
3
WRITE (Select bank and column and start write burst)
L
H
L
Valid
L
Col
WRITE with AP (Write Burst with Auto Precharge)
L
H
L
Valid
H
Col
3
BURST TERMINATE or enter DEEP POWER DOWN
L
H
L
X
4, 5
PRECHARGE (Deactivate Row in selected bank)
L
H
L
Valid
L
X
6
PRECHARGE ALL (Deactivate rows in all banks)
L
H
L
X
H
X
6
AUTO REFRESH or enter SELF REFRESH
L
H
X
7, 8, 9
MODE REGISTER SET
L
Valid
Op-code
10
Notes:
1.
All states and sequences not shown are illegal or reserved.
2.
DESELECT and NOP are functionally interchangeable.
3.
Auto precharge is non-persistent. A10 High enables Auto precharge, while A10 Low disables Auto precharge.
4.
Burst Terminate applies to only Read bursts with Autoprecharge disabled. This command is undefined and should not be
used for Read with Auto precharge enabled, and for Write bursts.
5.
This command is BURST TERMINATE if CKE is High and DEEP POWER DOWN entry if CKE is Low.
6.
If A10 is low, bank address determines which bank is to be precharged. If A10 is high, all banks are precharged and
BA0~BA1 are dont care.
7.
This command is AUTO REFRESH if CKE is High and SELF REFRESH if CKE is low.
8.
All address inputs and I/O are dont care except for CKE. Internal refresh counters control bank and row addressing.
9.
All banks must be precharged before issuing an AUTO-REFRESH or SELF REFRESH command.
10.
BA0 and BA1 value select between MRS and EMRS.
11.
CKE is HIGH for all commands shown except SELF REFRESH and DEEP POWER-DOWN.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| W949D2CB | 制造商:WINBOND 制造商全稱:Winbond 功能描述:512Mb Mobile LPDDR |
| W949D2CBJX5E | 功能描述:IC LPDDR SDRAM 512MBIT 90VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6 |
| W949D2CBJX5ETR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ |
| W949D2CBJX5I | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA |
| W949D2CBJX5I TR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ, INDUST |
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