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參數(shù)資料
| 型號： | W948D6FBHX6G |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | 8M X 16 DDR DRAM, 5 ns, PBGA60 |
| 封裝： | 8 X 9 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-60 |
| 文件頁數(shù)： | 14/60頁 |
| 文件大?。?/td> | 1147K |
| 代理商： | W948D6FBHX6G |
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W948D6FB / W948D2FB
256Mb Mobile LPDDR
Publication Release Date : May, 24, 2011
- 21 -
Revision A01-003
6.11.3 Truth Table - DM Operations
FUNCTION
DM
DQ
NOTES
Write Enable
L
Valid
1
Write Inhibit
H
X
1
Notes:
1.
Used to mask write data, provided coincident with the corresponding data.
6.11.4 Truth Table - CKE
CKEn-1
CKEn
CURRENT STATE
COMMANDn
ACTIONn
NOTES
L
Power Down
X
Maintain Power Down
L
Self Refresh
X
Maintain Self Refresh
L
Deep Power Down
X
Maintain Deep Power Down
L
H
Power Down
NOP or DESELECT
Exit Power Down
5, 6, 9
L
H
Self Refresh
NOP or DESELECT
Exit Self Refresh
5, 7, 10
L
H
Deep Power Down
NOP or DESELECT
Exit Deep Power Down
5, 8
H
L
All Banks Idle
NOP or DESELECT
Precharge Power Down Entry
5
H
L
Bank(s) Active
NOP or DESELECT
Active Power Down Entry
5
H
L
All Banks Idle
AUTO REFRESH
Self Refresh Entry
H
L
All Banks Idle
BURST TERMINATE
Enter Deep Power Down
H
See the other Truth Tables
Notes:
1.
CKEn is the logic state of CKE at clock edge n; CKEn-1 was the state of CKE at the previous clock edge.
2.
Current state is the state of
LPDDR SDRAM immediately prior to clock edge n.
3.
COMMANDn is the command registered at clock edge n, and ACTIONn is the result of COMMANDn.
4.
All states and sequences not shown are illegal or reserved.
5.
DESELECT and NOP are functionally interchangeable.
6.
Power Down exit time (tXP) should elapse before a command other than NOP or DESELECT is issued.
7.
SELF REFRESH exit time (tXSR) should elapse before a command other than NOP or DESELECT is issued.
8.
The Deep Power-Down exit procedure must be followed as discussed in the Deep Power-Down section of the Functional
Description.
9.
The clock must toggle at least once during the tXP period.
10.
The clock must toggle at least once during the tXSR time.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W949D2CB | 制造商:WINBOND 制造商全稱:Winbond 功能描述:512Mb Mobile LPDDR |
| W949D2CBJX5E | 功能描述:IC LPDDR SDRAM 512MBIT 90VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6 |
| W949D2CBJX5ETR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ |
| W949D2CBJX5I | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA |
| W949D2CBJX5I TR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ, INDUST |
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