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參數(shù)資料
| 型號： | W948D6FBHX6G |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | 8M X 16 DDR DRAM, 5 ns, PBGA60 |
| 封裝： | 8 X 9 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-60 |
| 文件頁數(shù)： | 15/60頁 |
| 文件大?。?/td> | 1147K |
| 代理商： | W948D6FBHX6G |
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W948D6FB / W948D2FB
256Mb Mobile LPDDR
Publication Release Date : May, 24, 2011
- 22 -
Revision A01-003
6.11.5 Truth Table - Current State BANKn - Command to BANKn
CURRENT STATE
CS
RAS CAS WE
COMMAND
ACTION
NOTES
Any
H
X
DESELECT
NOP or Continue previous operation
L
H
No Operation
NOP or Continue previous operation
Idle
L
H
ACTIVE
Select and activate row
L
H
AUTO REFRESH
Auto refresh
10
L
MRS
Mode register set
10
Row Active
L
H
L
H
READ
Select column & start read burst
L
H
L
WRITE
Select column & start write burst
L
H
L
PRECHARGE
Deactivate row in bank (or banks)
4
Read (Auto precharge
Disabled)
L
H
L
H
READ
Select column & start new read burst
5, 6
L
H
L
WRITE
Select column & start write burst
5, 6, 13
L
H
L
PRECHARGE
Truncate read burst, start precharge
L
H
L
BURST
TERMINATE
Burst terminate
11
Write (Auto precharge
Disabled)
L
H
L
H
READ
Select column & start read burst
5, 6, 12
L
H
L
WRITE
Select column & start new write burst
5, 6
L
H
L
PRECHARGE
Truncate write burst & start precharge
12
Notes:
1.
The table applies when both CKEn-1 and CKEn are HIGH, and after tXSR or tXP has been met if the previous state was
Self Refresh or Power Down.
2.
DESELECT and NOP are functionally interchangeable.
3.
All states and sequences not shown are illegal or reserved.
4.
This command may or may not be bank specific. If all banks are being precharged, they must be in a valid state for
precharging.
5.
A command other than NOP should not be issued to the same bank while a READ or WRITE burst with Auto Precharge is
enabled.
6.
The new Read or Write command could be Auto Prechrge enabled or Auto Precharge disabled.
7.
Current State Definitions:
Idle: The bank has been precharged, and tRP has been met.
Row Active: A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no register
accesses are in progress.
Read: A READ burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated.
Write: A WRITE burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated.
8.
The following states must not be interrupted by a command issued to the same bank. DESEDECT or NOP commands or
allowable commands to the other bank should be issued on any clock edge occurring during these states. Allowable
commands to the other bank are determined by its current state and this table, and according to next table.
Precharging: Starts with the registration of a PRECHARGE command and ends when tRP is met. Once tRP is met, the
bank will be in the idle state.
Row Activating: Starts with registration of an ACTIVE command and ends when tRCD is met. Once tRCD is met, the bank
will be in
the row active state.
Read with AP Enabled: Starts with the registration of the READ command with Auto Precharge enabled and ends when tRP
has been met. Once tRP has been met, the bank will be in the idle state.
Write with AP Enabled: Starts with registration of a WRITE command with Auto Precharge enabled and ends when tRP has
been met. Once tRP is met, the bank will be in the idle state.
9.
The following states must not be interrupted by any executable command; DESEDECT or NOP commands must be applied
to each positive clock edge during these states.
Refreshing: Starts with registration of an AUTO REFRESH command and ends when tRFC is met. Once tRFC is met, the
LPDDR SDRAM will be in an all banks idle state.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| W949D2CB | 制造商:WINBOND 制造商全稱:Winbond 功能描述:512Mb Mobile LPDDR |
| W949D2CBJX5E | 功能描述:IC LPDDR SDRAM 512MBIT 90VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6 |
| W949D2CBJX5ETR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ |
| W949D2CBJX5I | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA |
| W949D2CBJX5I TR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ, INDUST |
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