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參數(shù)資料
| 型號(hào)： | W948D6FBHX6G |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | 8M X 16 DDR DRAM, 5 ns, PBGA60 |
| 封裝： | 8 X 9 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-60 |
| 文件頁數(shù)： | 5/60頁 |
| 文件大?。?/td> | 1147K |
| 代理商： | W948D6FBHX6G |
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W948D6FB / W948D2FB
256Mb Mobile LPDDR
Publication Release Date : May, 24, 2011
- 13 -
Revision A01-003
6.2.2 Mode Register Definition
A6
A5
A4
0
1
0
CAS Latency
Reserved
A2
A1
A0
0
1
0
Burst Length
Reserved
2
4
8
16
Reserved
2
3
A3
0
1
Burst Type
Sequential
Interleave
Mode Register
Address Bus
A0
A1
A2
A3
A4
A5
A6
An..A7 (see Note 1)
BA0
BA1
0
0 (see Note 2)
CAS Latency
BT
Burst Length
NOTE:
1.MSB depends on LPDDR SDRAM density.
2.Alogic 0 should be programmed to all unused / undefined address bits to future compatibility.
6.2.3. Burst Length
Read and write accesses to the LPDDR SDRAM are burst oriented, with the burst length and burst type being
programmable.
The burst length determines the maximum number of column locations that can be accessed for a given READ or
WRITE command. Burst lengths of 2, 4, or 8 locations are available for both the sequential and the interleaved burst
types.
When a READ or WRITE command is issued, a block of columns equal to the burst length is effectively selected. All
accesses for that burst take place within the block, meaning that the burst will wrap within the block if a boundary is
reached.
The block is uniquely selected by A1
An when the burst length is set to two, by A2An when the burst length is set
to 4, by A3
An when the burst length is set to 8 (where An is the most significant column address bit for a given
configuration). The remaining (least significant) address bit(s) is (are) used to select the starting location within the
block. The programmed burst length applies to both read and write bursts.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W949D2CB | 制造商:WINBOND 制造商全稱:Winbond 功能描述:512Mb Mobile LPDDR |
| W949D2CBJX5E | 功能描述:IC LPDDR SDRAM 512MBIT 90VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6 |
| W949D2CBJX5ETR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ |
| W949D2CBJX5I | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA |
| W949D2CBJX5I TR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ, INDUST |
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