參數(shù)資料
型號: K4N56163QF-GC
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Mbit gDDR2 SDRAM
中文描述: 片256Mbit GDDR2 SDRAM的
文件頁數(shù): 8/73頁
文件大?。?/td> 1262K
代理商: K4N56163QF-GC
- 8 -
Rev 1.6 (Apr. 2005)
256M gDDR2 SDRAM
K4N56163QF-GC
Operating Temperature Condition
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions,
please refer to JESD51.2 standard.
2. At 0 - 85
°
C, operation temperature range are the temperature which all DRAM specification will be supported.
3. At 85 - 95
°
C operation temperature range, doubling refresh commands in frequency to a 32ms period ( tREFI=3.9 us ) is required,
and to enter to self refresh mode at this temperature range, an EMRS command is required to change internal refresh rate.
Input DC Logic Level
Input AC Logic Level
AC Input Test Conditions
Notes:
1.
2.
Input waveform timing is referenced to the input signal crossing through the V
IH/IL
(AC)
level applied to the device under test.
The input signal minimum slew rate is to be maintained over the range from V
REF
to V
IH
(AC) min for rising edges and the range
from V
REF
to V
IL
(AC) max for falling edges as shown in the below figure.
AC timings are referenced with input waveforms switching from V
IL
(AC) to V
IH
(AC) on the positive transitions and V
IH
(AC) to
V
IL
(AC) on the negative transitions.
3.
Symbol
TOPER
Parameter
Operating Temperature
Rating
0 to 95
Units
°
C
Notes
1, 2, 3
Symbol
V
IH
(DC)
Parameter
Min.
Max.
Units
V
Notes
DC input logic high
V
REF
+ 0.125
V
DDQ
+ 0.3
V
IL
(DC)
DC input logic low
- 0.3
V
REF
- 0.125
V
Symbol
VIH(AC)
Parameter
Min.
Max.
-
Units
V
Notes
AC input logic high
VREF + 0.250
VIL(AC)
AC input logic low
-
VREF - 0.250
V
Symbol
V
REF
V
SWING(MAX)
SLEW
Condition
Value
Units
Notes
Input reference voltage
0.5 * V
DDQ
1.0
V
1
Input signal maximum peak to peak swing
V
1
Input signal minimum slew rate
1.0
V/ns
2, 3
V
DDQ
V
IH
(AC) min
V
IH
(DC) min
V
REF
V
IL
(DC) max
V
IL
(AC) max
V
SS
< AC Input Test Signal Waveform >
V
SWING(MAX)
delta TR
delta TF
V
REF
- V
IL
(AC) max
delta TF
Falling Slew =
Rising Slew =
V
IH
(AC) min - V
REF
delta TR
相關(guān)PDF資料
PDF描述
K4N56163QF-GC25 256Mbit gDDR2 SDRAM
K4N56163QF-GC30 256Mbit gDDR2 SDRAM
K4N56163QF-GC37 256Mbit gDDR2 SDRAM
K4PE68A Transient Voltage Suppressor Diodes
K4R271669A 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4N56163QF-GC25 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit gDDR2 SDRAM
K4N56163QF-GC30 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit gDDR2 SDRAM
K4N56163QF-GC37 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit gDDR2 SDRAM
K4N56163QG-ZC2A 制造商:Samsung Semiconductor 功能描述:
K4P24V3 制造商:AROMAT 功能描述:REPLAY 700 OHM