參數(shù)資料
型號(hào)： K4N56163QF-GC
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256Mbit gDDR2 SDRAM
中文描述： 片256Mbit GDDR2 SDRAM的
文件頁數(shù)： 56/73頁
文件大小： 1262K
代理商： K4N56163QF-GC
- 56 -
Rev 1.6 (Apr. 2005)
256M gDDR2 SDRAM
K4N56163QF-GC
Burst Write with Auto-Precharge
If A10 is high when a Write Command is issued, the Write with Auto-Precharge function is engaged. The gDDR2 SDRAM
automatically begins precharge operation after the completion of the burst write plus write recovery time (tWR). The bank
undergoing auto-precharge from the completion of the write burst may be reactivated if the following two conditions are
satisfied.
(1) The data-in to bank activate delay time (WR + tRP) has been satisfied.
(2) The RAS cycle time (tRC) from the previous bank activation has been satisfied.
Burst Write with Auto-Precharge (tRC Limit): WL = 2, tWR =2, tRP=3, BL=4
Burst Write with Auto-Precharge (tWR + tRP): WL = 4, tWR =2, tRP=3, BL=4
CMD
NOP
NOP
NOP
NOP
NOP
Bank A
Active
DQs
NOP
CK/CK
T0
T2
T1
T3
T4
T5
T6
T7
Tm
DIN A
0
DIN A
1
DIN A
2
DIN A
3
WRA BankA
Post CAS
WL =RL - 1 = 2
DQS/DQS
A10 = 1
Auto Precharge Begins
NOP
> =
WR
Completion of the Burst Write
> = t
RP
> = t
RC
CMD
NOP
NOP
NOP
NOP
NOP
Bank A
Active
DQs
NOP
CK/CK
T0
T4
T3
T5
T6
T7
T8
T9
T12
DIN A
0
DIN A
1
DIN A
2
DIN A
3
WRA Bank A
Post CAS
WL =RL - 1 = 4
DQS/DQS
A10 = 1
Auto Precharge Begins
NOP
> =
WR
Completion of the Burst Write
> = t
RP
> = t
RC
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