參數(shù)資料
型號： K4N56163QF-GC
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256Mbit gDDR2 SDRAM
中文描述： 片256Mbit GDDR2 SDRAM的
文件頁數(shù)： 37/73頁
文件大小： 1262K
代理商： K4N56163QF-GC
- 37 -
Rev 1.6 (Apr. 2005)
256M gDDR2 SDRAM
K4N56163QF-GC
Posted CAS
Posted CAS operation is supported to make command and data bus efficient for sustainable bandwidths in gDDR2
SDRAM. In this operation, the gDDR2 SDRAM allows a CAS read or write command to be issued immediately after the
RAS bank activate command (or any time during the RAS-CAS-delay time, tRCD, period). The command is held for the
time of the Additive Latency (AL) before it is issued inside the device. The Read Latency (RL) is controlled by the sum of
AL and the CAS latency (CL). Therefore if a user chooses to issue a R/W command before the tRCDmin, then AL (greater
than 0) must be written into the EMR(1). The Write Latency (WL) is always defined as RL - 1 (read latency -1) where read
latency is defined as the sum of additive latency plus CAS latency (RL=AL+CL). Read or Write operations using AL allow
seamless bursts (refer to seamless operation timing diagram examples in Read burst and Write burst section)
Examples of posted CAS operation
Example 1 Read followed by a write to the same bank
[AL = 2 and CL = 3, RL = (AL + CL) = 5, WL = (RL - 1) = 4]
Example 2 Read followed by a write to the same bank
[AL = 0 and CL = 3, RL = (AL + CL) = 3, WL = (RL - 1) = 2]
0
1
2
3
4
5
6
7
8
9
10
11
12
Active
A-Bank
Read
A-Bank
Write
A-Bank
Dout0
Dout1
Dout2
Dout3
Din0
Din1
Din2
Din3
CK/CK
CMD
DQS/DQS
DQ
AL = 2
-1
> = tRCD
CL = 3
> = tRAC
WL = RL -1 = 4
RL = AL + CL = 5
Active
A-Bank
Read
A-Bank
Write
A-Bank
Dout0
Dout1
Dout2
Dout3
Din0
Din1
Din2
Din3
AL = 0
> = tRCD
CL = 3
> = tRAC
WL = RL -1 = 2
RL = AL + CL = 3
0
1
2
3
4
5
6
7
8
9
10
11
12
-1
CK/CK
CMD
DQS/DQS
DQ
相關(guān)PDF資料
PDF描述
K4N56163QF-GC25 256Mbit gDDR2 SDRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4N56163QF-GC25 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit gDDR2 SDRAM
K4N56163QF-GC30 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit gDDR2 SDRAM
K4N56163QF-GC37 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit gDDR2 SDRAM
K4N56163QG-ZC2A 制造商:Samsung Semiconductor 功能描述:
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