參數(shù)資料
型號(hào): K4N56163QF-GC
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Mbit gDDR2 SDRAM
中文描述: 片256Mbit GDDR2 SDRAM的
文件頁數(shù): 28/73頁
文件大小: 1262K
代理商: K4N56163QF-GC
- 28 -
Rev 1.6 (Apr. 2005)
256M gDDR2 SDRAM
K4N56163QF-GC
Off-Chip Driver (OCD) Impedance Adjustment
gDDR2 SDRAM supports driver calibration feature and the flow chart below is an example of sequence. Every calibration
mode command should be followed by “OCD calibration mode exit” before any other command being issued.
MRS should
be set before entering OCD impedance adjustment and ODT (On Die Termination) should be carefully controlled depend-
ing on system environment.
Start
EMRS: Drive(1)
DQ & DQS High; DQS Low
Test
EMRS :
Enter Adjust Mode
BL=4 code input to all DQs
Inc, Dec, or NOP
EMRS: Drive(0)
DQ & DQS Low; DQS High
Test
EMRS :
Enter Adjust Mode
BL=4 code input to all DQs
Inc, Dec, or NOP
EMRS: OCD calibration mode exit
End
ALL OK
ALL OK
Need Calibration
Need Calibration
EMRS: OCD calibration mode exit
EMRS: OCD calibration mode exit
EMRS: OCD calibration mode exit
EMRS: OCD calibration mode exit
EMRS: OCD calibration mode exit
MRS shoud be set before entering OCD impedance adjustment and ODT should
be carefully controlled depending on system environment
相關(guān)PDF資料
PDF描述
K4N56163QF-GC25 256Mbit gDDR2 SDRAM
K4N56163QF-GC30 256Mbit gDDR2 SDRAM
K4N56163QF-GC37 256Mbit gDDR2 SDRAM
K4PE68A Transient Voltage Suppressor Diodes
K4R271669A 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4N56163QF-GC25 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit gDDR2 SDRAM
K4N56163QF-GC30 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit gDDR2 SDRAM
K4N56163QF-GC37 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit gDDR2 SDRAM
K4N56163QG-ZC2A 制造商:Samsung Semiconductor 功能描述:
K4P24V3 制造商:AROMAT 功能描述:REPLAY 700 OHM