參數(shù)資料
型號: K4N56163QF-GC
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Mbit gDDR2 SDRAM
中文描述: 片256Mbit GDDR2 SDRAM的
文件頁數(shù): 26/73頁
文件大?。?/td> 1262K
代理商: K4N56163QF-GC
- 26 -
Rev 1.6 (Apr. 2005)
256M gDDR2 SDRAM
K4N56163QF-GC
EMRS (1) Programming
A0
0
1
DLL Enable
Enable
Disable
A5
0
0
0
0
1
1
1
1
A4
0
0
1
1
0
0
1
1
A3
0
1
0
1
0
1
0
1
Additive Latency
0
1
2
3
4
5
Reserved
Reserved
a: When Adjust mode is issued, AL from previously set value must be applied.
b: After setting to default, OCD mode needs to be exited by setting A9-A7 to
000. Refer to the following 3.2.2.3 section for detailed information
A9
0
0
0
A8
0
0
1
A7
0
1
0
OCD Calibration Program
OCD Calibration mode exit; maintain setting
Drive(1)
Drive(0)
1
0
0
Adjust mode
a
1
1
1
OCD Calibration default
b
A1
Output Driver
Impedance Control
Normal
Weak
Driver
Size
100%
60%
0
1
A10
0
1
DQS
Enable
Disable
A6
0
0
1
1
A2
0
1
0
1
R
tt
(
NOMINAL
)
ODT Disabled
75 ohm
150 ohm
50 ohm
BA1
0
0
1
1
BA0
0
1
0
1
MRS mode
MRS
EMRS(1)
EMRS(2): Reserved
EMRS(3): Reserved
A12
Qoff (Optional)
a
a. Outputs disabled - DQs, DQSs, DQSs .
This feature is used in conjunction with dimm
IDD meaurements when IDDQ is not desired to
be included.
0
1
Output buffer enabled
Output buffer disabled
A10
(DQS Enable)
Strobe Function
Matrix
DQS
DQS
DQS
DQS
DQS
Hi-z
0 (Enable)
1 (Disable)
BA
1
BA
0
A
12
A
11
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
0
1
Qoff
0
DQS
OCD Program
Rtt
Additive Latency
Rtt
D.I.C
DLL
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