
80960VH
Preliminary
Datasheet
23
Table 8. Memory Controller Signal Descriptions (Sheet 1 of 2)
NAME
TYPE
DESCRIPTION
CAS7:0#
O
R(1)
H(Q)
P(Q)
COLUMN ADDRESS STROBE
signals are used for DRAM accesses
and are asserted when the MA11:0 signals contain a valid column
address. CAS7:0# signals are asserted during refresh.
Non-Interleaved Operation:
CAS0#,CAS4# = BE0#
lane access
CAS1#,CAS5# = BE1#
lane access
CAS2#,CAS6# = BE2#
lane access
CAS3#,CAS7# = BE3#
lane access
Interleaved Operation:
CAS0# = BE0#
Even leaf lane access
CAS1# = BE1#
Even leaf lane access
CAS2# = BE2#
Even leaf lane access
CAS3# = BE3#
Even leaf lane access
CAS4# = BE0#
Odd leaf lane access
CAS5# = BE1#
Odd leaf lane access
CAS6# = BE2#
Odd leaf lane access
CAS7# = BE3#
Odd leaf lane access
CE1:0#
O
R(1)
H(Q)
P(Q)
CHIP ENABLE
signals indicate an access to one of the two SRAM/
FLASH/ ROM memory banks. CE0# and CE1# are never asserted at the
same time. These signals are valid during the entire memory operation.
CE0# is asserted for accesses to memory bank 0. CE1# is asserted for
accesses to memory bank 1.
DALE1:0
O
R(0)
H(Q)
P(Q)
DRAM ADDRESS LATCH ENABLE
signals support external address
demultiplexing of the MA11:0 address lines for interleaved DRAM
systems. Use these to directly interface to ‘373’ type latches. These
signals are only valid for accesses to interleaved memory systems.
DALE0 is asserted during a valid even leaf address. DALE1 is asserted
during a valid odd leaf address.
DP3:0
I/O
R(X)
H(Q)
P(Q)
DATA PARITY
carries the parity information for DRAM accesses. Each
parity bit corresponds to a group of 8 data bus signals as follows:
DP0
—
AD7:0
DP2
—
AD23:16
DP1
—
AD15:8
DP3
—
AD31:24
The memory controller generates parity information for local bus writes
during data cycles. During read data cycles, the memory controller
checks parity and provides notification of parity errors on the clock
following the data cycle.
Parity checking and polarity are user-programmable. Parity generation
and checking are valid only for data lines that have their associated
enable bits asserted.
DWE1:0#
O
R(1)
H(Q)
P(Q)
DRAM WRITE ENABLE
signals distinguish between read and write
accesses to DRAM. DWE1:0# lines are asserted for writes and
deasserted for reads. CAS7:0# determine valid bytes lanes during the
access. These two outputs are functionally equivalent for all DRAM
accesses; these provide increased drive capability for heavily loaded
systems.
LEAF1:0#
O
R(1)
H(Q)
P(Q)
LEAF ENABLE
signals control the data output enables of the memory
system during an interleaved DRAM read access. Use these to directly
interface to either DRAM or transceiver output enable signals. LEAF0# is
asserted during an even leaf access. LEAF1# is asserted during an odd
leaf access.