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參數(shù)資料
| 型號(hào)： | NAND01GW3B2CN1E |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 128M X 8 FLASH 3V PROM, 25000 ns, PDSO48 |
| 封裝： | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 |
| 文件頁數(shù)： | 63/65頁 |
| 文件大小： | 1473K |
| 代理商： | NAND01GW3B2CN1E |
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NAND01G-B2C
Description
1
Description
The NAND01G-B2C is a 128-Mbit x8 bit, with 4-Mbit x8 bit capacity, non-volatile flash
memory that uses NAND cell technology. The device operates with either a 1.8 V or 3 V
voltage supply. The size of a page is either 2112 bytes (2048 + 64 spare) or 1056 words
(1024 + 32 spare) depending on whether the device has a x8 or x16 bus width.
The address lines are multiplexed with the data input/output signals on a multiplexed x8 or
x16 input/output bus. This interface reduces the pin count and makes it possible to migrate
to other densities without changing the footprint.
Each block can be programmed and erased up to 100,000 cycles (with ECC on). To extend
the lifetime of NAND flash devices, the implementation of an error correction code (ECC) is
mandatory.
The devices feature a write protect pin that allows performing hardware protection against
program and erase operations.
The devices feature an open-drain ready/busy output that can be used to identify if the
program/erase/read (P/E/R) controller is currently active. The use of an open-drain output
allows the ready/busy pins from several memories to be connected to a single pull-up
resistor.
A Copy Back Program command is available to optimize the management of defective
blocks. When a page program operation fails, the data can be programmed in another page
without having to resend the data to be programmed.
The cache read feature is also implemented according to ONFI 1.0 specification.
All devices have the chip enable don’t care feature, which allows the bus to be shared
among several memories active at the same time, as chip enable transitions during the
latency time do not stop the read operation. Program and erase operations can never be
interrupted by chip enable transitions.
The devices are available in the following packages:
●
TSOP48 (12 x 20 mm)
●
VFBGA63 (9 x 11 x 1.05 mm, 0.8 mm pitch).
and come with three security features:
●
OTP (one time programmable) area, which is a restricted access area where sensitive
data/code can be stored permanently.
●
Serial number (unique identifier) option, which allows the devices to be uniquely
identified.
●
Non-volatile protection to lock sensible data permanently. For more details of this
option contact your nearest Numonyx sales office.
These security features are subject to an NDA (non-disclosure agreement) and are,
therefore, not described in the datasheet. For more details about them, refer to the nearest
Numonyx sales office.
For information on how to order these options refer to Table 28: Ordering information
scheme. Devices are shipped from the factory with block 0 always valid and the memory
content bits, in valid blocks, erased to ’1’.
See Table 2: Product description, for all the devices available in the family.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NAND04GR3B3AN6 | 512M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 |
| NAND512W3B3BZA1F | 64M X 8 FLASH 3V PROM, 35 ns, PBGA63 |
| NAND512W3B3CV1 | 64M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND01GR4B3AV1F | 64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 |
| NAND01GW4B3CZA1E | 64M X 16 FLASH 3V PROM, 35 ns, PBGA63 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND01GW3B2CN1F | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GW3B2CN6 | 制造商:STMicroelectronics 功能描述:128M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND01GW3B2CN6E | 功能描述:IC FLASH 1GBIT 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| NAND01GW3B2CN6F | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GW3B2CWFD | 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film |
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