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參數(shù)資料
| 型號： | NAND01GW3B2CN1E |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 128M X 8 FLASH 3V PROM, 25000 ns, PDSO48 |
| 封裝： | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 |
| 文件頁數(shù)： | 28/65頁 |
| 文件大?。?/td> | 1473K |
| 代理商： | NAND01GW3B2CN1E |
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Device operations
NAND01G-B2C
Figure 15.
Read ONFI signature waveforms
6.10
Read parameter page
The Read Parameter Page command retrieves the data structure that describes the NAND
flash organization, features, timings and other behavioral parameters. This data structure
enables the host processor to automatically recognize the NAND flash configuration of a
device. The whole data structure is repeated at least five times.
See Figure 16 for a description of the read parameter page waveforms.
The Random Data Read command can be issued during execution of the read parameter
page to read specific portions of the parameter page.
The Read Status command may be used to check the status of read parameter page during
execution. After completion of the Read Status command, 00h is issued by the host on the
command line to continue with the data output flow for the Read Parameter Page command.
Read status enhanced is not be used during execution of the Read Parameter Page
command.
Table 16 defines the parameter page data structure. For parameters that span multiple
bytes, the least significant byte of the parameter corresponds to the first byte.
Values are reported in the parameter page in bytes when referring to items related to the
size of data access (as in an x8 data access device). For example, the chip returns how
many data bytes are in a page. For a device that supports x16 data access, the host is
required to convert byte values to word values for its use. Unused fields are set to 0h.
For more detailed information about parameter page data bits, refer to ONFI Specification
1.0 section 5.4.1.
90h
20h
CL
E
W
AL
R
I/O
tRLQV
Read Electronic
Signature
command
1st cycle
address
ai13178b
(Read ES access time)
tALLRL1
49h
46h
4Fh
4Eh
XXh
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| NAND04GR3B3AN6 | 512M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 |
| NAND512W3B3BZA1F | 64M X 8 FLASH 3V PROM, 35 ns, PBGA63 |
| NAND512W3B3CV1 | 64M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND01GR4B3AV1F | 64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 |
| NAND01GW4B3CZA1E | 64M X 16 FLASH 3V PROM, 35 ns, PBGA63 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NAND01GW3B2CN1F | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GW3B2CN6 | 制造商:STMicroelectronics 功能描述:128M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND01GW3B2CN6E | 功能描述:IC FLASH 1GBIT 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| NAND01GW3B2CN6F | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GW3B2CWFD | 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film |
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