參數(shù)資料
型號: NAND01GW3B2CN1E
廠商: NUMONYX
元件分類: PROM
英文描述: 128M X 8 FLASH 3V PROM, 25000 ns, PDSO48
封裝: 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
文件頁數(shù): 11/65頁
文件大?。?/td> 1473K
代理商: NAND01GW3B2CN1E
NAND01G-B2C
Command set
19/65
5
Command set
All bus write operations to the device are interpreted by the command interface. The
commands are input on I/O0-I/O7 and are latched on the rising edge of Write Enable when
the Command Latch Enable signal is High. Device operations are selected by writing
specific commands to the command register. The two-step command sequences for
program and erase operations are imposed to maximize data security.
The commands are summarized in Table 10: Commands.
Table 10.
Commands
Command
Bus write operations(1)
1. The bus cycles are only shown for issuing the codes. The cycles required to input the
addresses or input/output data are not shown.
Commands
accepted
during
busy
1st cycle
2nd cycle
3rd cycle
4th cycle
Read
00h
30h
Random Data Output
05h
E0h
Cache Read
00h
31h
Exit Cache Read
3Fh
Page Program
(sequential input default)
80h
10h
Random Data Input
85h
Copy Back Program
00h
35h
85h
10h
Block Erase
60h
D0h
Reset
FFh
Yes
Read Electronic Signature
90h
Read Status Register
70h
Yes
Read ONFI Parameter Page
ECh
相關(guān)PDF資料
PDF描述
NAND04GR3B3AN6 512M X 8 FLASH 1.8V PROM, 35 ns, PDSO48
NAND512W3B3BZA1F 64M X 8 FLASH 3V PROM, 35 ns, PBGA63
NAND512W3B3CV1 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND01GR4B3AV1F 64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
NAND01GW4B3CZA1E 64M X 16 FLASH 3V PROM, 35 ns, PBGA63
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND01GW3B2CN1F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GW3B2CN6 制造商:STMicroelectronics 功能描述:128M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND01GW3B2CN6E 功能描述:IC FLASH 1GBIT 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步,DDR II 存儲容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ
NAND01GW3B2CN6F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GW3B2CWFD 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film