參數(shù)資料
型號(hào): NAND01GW3B2CN1E
廠商: NUMONYX
元件分類(lèi): PROM
英文描述: 128M X 8 FLASH 3V PROM, 25000 ns, PDSO48
封裝: 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
文件頁(yè)數(shù): 38/65頁(yè)
文件大?。?/td> 1473K
代理商: NAND01GW3B2CN1E
NAND01G-B2C
Software algorithms
43/65
These models provide information such as AC characteristics, rise/fall times and package
mechanical data, all of which are measured or simulated at voltage and temperature ranges
wider than those allowed by target specifications.
IBIS models are used to simulate PCB connections and can be used to resolve compatibility
issues when upgrading devices. They can be imported into SPICETOOLS.
相關(guān)PDF資料
PDF描述
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NAND01GW4B3CZA1E 64M X 16 FLASH 3V PROM, 35 ns, PBGA63
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND01GW3B2CN1F 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GW3B2CN6 制造商:STMicroelectronics 功能描述:128M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND01GW3B2CN6E 功能描述:IC FLASH 1GBIT 48TSOP RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SRAM - 同步,DDR II 存儲(chǔ)容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤(pán) 其它名稱(chēng):71P71804S200BQ
NAND01GW3B2CN6F 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GW3B2CWFD 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film