參數(shù)資料
型號: NAND01GW3B2CN1E
廠商: NUMONYX
元件分類: PROM
英文描述: 128M X 8 FLASH 3V PROM, 25000 ns, PDSO48
封裝: 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
文件頁數(shù): 44/65頁
文件大?。?/td> 1473K
代理商: NAND01GW3B2CN1E
NAND01G-B2C
DC and AC parameters
49/65
Table 24.
AC characteristics for command, address, data input
Symbol
Alt.
symbol
Parameter
1.8 V
devices
3 V
devices
Unit
tALLWH
tALS
Address Latch Low to Write Enable High
AL setup time
Min
25
12
ns
tALHWH
Address Latch High to Write Enable High
tCLHWH
tCLS
Command Latch High to Write Enable
High
CL setup time
Min
25
12
ns
tCLLWH
Command Latch Low to Write Enable
High
tDVWH
tDS
Data Valid to Write Enable High
Data setup time
Min
20
12
ns
tELWH
tCS
Chip Enable Low to Write Enable High
E setup time
Min
35
20
ns
tWHALH
tALH
Write Enable High to Address Latch High
AL hold time
Min
10
5
ns
tWHALL
Write Enable High to Address Latch Low
AL hold time
Min
tWHCLH
tCLH
Write Enable High to Command Latch
High
CL hold time
Min
10
5
ns
tWHCLL
Write Enable High to Command Latch
Low
tWHDX
tDH
Write Enable High to Data Transition
Data hold time
Min
10
5
ns
tWHEH
tCH
Write Enable High to Chip Enable High
E hold time
Min
10
5
ns
tWHWL
tWH
Write Enable High to Write Enable Low
W High hold time Min
15
10
ns
tWLWH
tWP
Write Enable Low to Write Enable High
W pulse width
Min
25
12
ns
tWLWL
tWC
Write Enable Low to Write Enable Low
Write cycle time
Min
45
25
ns
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