參數(shù)資料
型號(hào)： KBE00G003M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： NAND 512Mb*2 + Mobile SDRAM 256Mb*2
中文描述： NAND閃存的512Mb * 2移動(dòng)SDRAM 256Mb的* 2
文件頁數(shù)： 86/89頁
文件大?。?/td> 1238K
代理商： KBE00G003M
KBE00G003M-D411
MCP MEMORY
July 2005
86
Revision 0.1
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CKE
CS
RAS
CAS
A10/AP
ADDR
WE
: Don’t care
CLOCK
Self Refresh Entry & Exit Cycle
Self Refresh Entry
*NOTE:
TO ENTER SELF REFRESH MODE
1. CS, RAS & CAS with CKE should be low at the same clcok cycle.
2. After 1 clock cycle, all the inputs including the system clock can be don't care except for CKE.
3. The device remains in self refresh mode as long as CKE stays "Low".
cf.) Once the device enters self refresh mode, minimum t
RAS
is required before exit from self refresh.
TO EXIT SELF REFRESH MODE
4. System clock restart and be stable before returning CKE high.
5. CS starts from high.
6. Minimum t
SRFX
is required after CKE going high to complete self refresh exit.
7. 4K cycle(64Mb ,128Mb) or 8K cycle(256Mb, 512Mb) of burst auto refresh is required before self refresh entry and
after self refresh exit if the system uses burst refresh.
BA0,BA1
DQM
DQ
*Note 1
*Note 4
t
SS
*Note 3
≈
t
SRFX
*Note 2
*Note 6
Self Refresh Exit
Auto Refresh
≈
≈
≈
≈
≈
≈
≈
≈
Hi-Z
Hi-Z
≈
相關(guān)PDF資料
PDF描述
KBE00G003M-D411 NAND 512Mb*2 + Mobile SDRAM 256Mb*2
KBE00S009M 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
KBE00S009M-D411 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
KBJ2501 25A SINGLE PHASE SILICON BRIDGE RECTIFIER
KBJ2502 25A SINGLE PHASE SILICON BRIDGE RECTIFIER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KBE00G003M-D411 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:NAND 512Mb*2 + Mobile SDRAM 256Mb*2
KBE00S003M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2
KBE00S003M-D411 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2
KBE00S009M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
KBE00S009M-D411 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
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