參數(shù)資料
型號(hào): KBE00G003M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: NAND 512Mb*2 + Mobile SDRAM 256Mb*2
中文描述: NAND閃存的512Mb * 2移動(dòng)SDRAM 256Mb的* 2
文件頁數(shù): 83/89頁
文件大小: 1238K
代理商: KBE00G003M
KBE00G003M-D411
MCP MEMORY
July 2005
83
Revision 0.1
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CKE
CS
RAS
CAS
BA1
A10/AP
ADDR
WE
: Don’t care
CLOCK
Write Interrupted by Precharge Command & Write Burst Stop Cycle @ Full Page Burst,
tRDL=2CLK
RAa
Row Active
(A-Bank)
Write
(A-Bank)
*NOTE:
1. At full page mode, burst is finished by burst stop or precharge.
2. Data-in at the cycle of interrupted by precharge can not be written into the corresponding
memory cell. It is defined by AC parameter of t
RDL
.
DQM at write interrupted by precharge command is needed to prevent invalid write.
DQM should mask invalid input data on precharge command cycle when asserting precharge
before end of burst. Input data after Row precharge cycle will be masked internally.
3. Burst stop is valid at every burst length.
BA0
DQM
DQ
CAa
CAb
Burst Stop
HIGH
RAa
DAa3 DAa4
DAb0 DAb1 DAb2 DAb3 DAb4 DAb5
t
BDL
*Note 1
t
RDL
*Note 1,2
Write
(A-Bank)
Precharge
(A-Bank)
DAa2
DAa1
DAa0
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