參數(shù)資料
型號(hào)： KBE00G003M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： NAND 512Mb*2 + Mobile SDRAM 256Mb*2
中文描述： NAND閃存的512Mb * 2移動(dòng)SDRAM 256Mb的* 2
文件頁(yè)數(shù)： 3/89頁(yè)
文件大?。?/td> 1238K
代理商： KBE00G003M
July 2005
3
KBE00G003M-D411
MCP MEMORY
Revision 0.1
GENERAL DESCRIPTION
The KBE00G003M is a Multi-Chip Package Memory which combines 1Gbit Nand Flash Memory(organized with two pieces of
512Mbit Nand Flash Memory) and 512Mbit synchronous high data rate Dynamic RAM. (organized with two pieces of 256Mbit Mobile
SDRAM) 1Gbit NAND Flash memory is organized as 128M x8 bits and 512Mbit Mobile SDRAM is organized as 8M x16 bits x4 banks
In 1Gbit NAND Flash, its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program
operation can be performed in typically 200
μ
s on the 528-byte page and an erase operation can be performed in typically 2ms on a
16K-byte block. Data in the data register can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and
data input/output as well as command inputs. The on-chip write controller automates all program and erase functions including pulse
repetition, where required, and internal verify and margining of data. Even the write-intensive systems can take advantage of the
extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
This device is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable appli-
cations requiring non-volatility.
In 512Mbit SDRAM, Synchronous design make a device controlled precisely with the use of system clock and I/O transactions are
possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the
same device to be useful for a variety of high bandwidth, high performance memory system applications.
The KBE00G003A is suitable for use in data memory of mobile communication system to reduce not only mount area but also power
consumption. This device is available in 107-ball FBGA Type.
FEATURES
<Common>
Operating Temperature : -25
°
C ~ 85
°
C
Package : 107ball FBGA Type -
10.5mmx13mm, 0.8mm pitch
<NAND>
Power Supply Voltage : 1.7~ 1.95V
Organization
- Memory Cell Array : (128M + 4096K)bit x 8 bit
- Data Register : (512 + 16)bit x 8bit
Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (16K + 512)Byte
Page Read Operation
- Page Size : (512 + 16)Byte
- Random Access : 15
μ
s(Max.)
- Serial Page Access : 50ns(Min.)
Fast Write Cycle Time
- Program time : 200
μ
s(Typ.)
- Block Erase Time : 2ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
Command Register Operation
Intelligent Copy-Back
Unique ID for Copyright Protection
<Mobile SDRAM>
Power Supply Voltage : 1.7~1.95V
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system
clock.
Burst read single-bit write operation.
Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
-. DS (Driver Strength)
DQM for masking.
Auto refresh.
64ms refresh period (8K cycle).
1/CS Support.
Multi-Chip Package MEMORY
512M Bit(64Mx8) Nand Flash*2 / 256M Bit(8Mx8x4Banks) Mobile SDRAM*2
Address configuration
Organization
Bank
Row
Column Address
32M x 16
BA0, BA1
A0 - A12
A0 - A9
相關(guān)PDF資料
PDF描述
KBE00G003M-D411 NAND 512Mb*2 + Mobile SDRAM 256Mb*2
KBE00S009M 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
KBE00S009M-D411 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
KBJ2501 25A SINGLE PHASE SILICON BRIDGE RECTIFIER
KBJ2502 25A SINGLE PHASE SILICON BRIDGE RECTIFIER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KBE00G003M-D411 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:NAND 512Mb*2 + Mobile SDRAM 256Mb*2
KBE00S003M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2
KBE00S003M-D411 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2
KBE00S009M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
KBE00S009M-D411 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
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