參數(shù)資料
型號(hào)： KBE00G003M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： NAND 512Mb*2 + Mobile SDRAM 256Mb*2
中文描述： NAND閃存的512Mb * 2移動(dòng)SDRAM 256Mb的* 2
文件頁(yè)數(shù)： 68/89頁(yè)
文件大?。?/td> 1238K
代理商： KBE00G003M
KBE00G003M-D411
MCP MEMORY
July 2005
68
Revision 0.1
FUNCTION TRUTH TABLE (TABLE 1)
Current
State
CS
RAS
CAS
WE
BA
Address
Action
Note
IDLE
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
H
L
L
L
L
L
X
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
X
H
H
H
H
L
L
L
X
H
H
H
H
L
L
L
X
H
H
H
L
L
X
H
H
H
L
L
X
H
H
L
H
H
L
L
X
H
H
L
L
H
H
L
X
H
H
L
L
H
H
L
X
H
H
L
L
H
H
L
X
H
H
L
H
L
X
H
H
L
H
L
X
H
L
X
H
L
H
L
X
H
L
H
L
H
L
X
X
H
L
H
L
H
L
X
X
H
L
H
L
H
L
X
X
H
L
X
X
X
X
H
L
X
X
X
X
X
X
BA
BA
BA
X
X
X
X
NOP
NOP
ILLEGAL
2
2
CA, A
10
/AP ILLEGAL
RA
A
10
/AP
X
OP code
X
X
X
CA, A
10
/AP Begin Read ; latch CA ; determine AP
CA, A
10
/AP Begin Read ; latch CA ; determine AP
RA
ILLEGAL
A
10
/AP
Precharge
X
ILLEGAL
X
NOP (Continue Burst to End --> Row Active)
X
NOP (Continue Burst to End --> Row Active)
X
Term burst --> Row active
CA, A
10
/AP Term burst, New Read, Determine AP
CA, A
10
/AP Term burst, New Write, Determine AP
RA
ILLEGAL
A
10
/AP
Term burst, Precharge timing for Reads
X
ILLEGAL
X
NOP (Continue Burst to End --> Row Active)
X
NOP (Continue Burst to End --> Row Active)
X
Term burst --> Row active
CA, A
10
/AP Term burst, New read, Determine AP
CA, A
10
/AP Term burst, New Write, Determine AP
RA
ILLEGAL
A
10
/AP
Term burst, precharge timing for Writes
X
ILLEGAL
X
NOP (Continue Burst to End --> Precharge)
X
NOP (Continue Burst to End --> Precharge)
X
ILLEGAL
CA, A
10
/AP ILLEGAL
RA, RA
10
ILLEGAL
X
ILLEGAL
X
NOP (Continue Burst to End --> Precharge)
X
NOP (Continue Burst to End --> Precharge)
X
ILLEGAL
CA, A
10
/AP ILLEGAL
RA, RA
10
ILLEGAL
X
ILLEGAL
Row (& Bank) Active ; Latch RA
NOP
Auto Refresh or Self Refresh
Mode Register Access
NOP
NOP
ILLEGAL
4
5
5
OP code
X
X
X
BA
BA
BA
BA
X
X
X
X
BA
BA
BA
BA
X
X
X
X
BA
BA
BA
BA
X
X
X
X
BA
BA
X
X
X
X
BA
BA
X
Row
Active
2
2
Read
3
2
Write
3
3
2
3
Read with
Auto
Precharge
2
Write with
Auto
Precharge
2
相關(guān)PDF資料
PDF描述
KBE00G003M-D411 NAND 512Mb*2 + Mobile SDRAM 256Mb*2
KBE00S009M 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
KBE00S009M-D411 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
KBJ2501 25A SINGLE PHASE SILICON BRIDGE RECTIFIER
KBJ2502 25A SINGLE PHASE SILICON BRIDGE RECTIFIER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KBE00G003M-D411 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:NAND 512Mb*2 + Mobile SDRAM 256Mb*2
KBE00S003M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2
KBE00S003M-D411 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2
KBE00S009M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
KBE00S009M-D411 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
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