參數(shù)資料
型號(hào)： KBE00G003M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： NAND 512Mb*2 + Mobile SDRAM 256Mb*2
中文描述： NAND閃存的512Mb * 2移動(dòng)SDRAM 256Mb的* 2
文件頁數(shù)： 5/89頁
文件大?。?/td> 1238K
代理商： KBE00G003M
July 2005
5
KBE00G003M-D411
MCP MEMORY
Revision 0.1
PIN DESCRIPTION
Pin Name
Pin Function(Mobile SDRAM)
CLK
System Clock
CKE
Clock Enable
CS
Chip Select
RAS
Row Address Strobe
CAS
Column Address Strobe
WEd
Write Enable
A0 ~ A12
Address Input
BA0 ~ BA1
Bank Address Input
LDQM
Lower Input/Output Data Mask
UDQM
Upper Input/Output Data Mask
DQ0 ~ DQ15
Data Input/Output
Vdd
Power Supply
Vddq
Data Out Power
Vss
Ground
Vssq
DQ Ground
Pin Name
Pin Function(NAND Flash)
CE
Chip Enable
RE
Read Enable
WP
Write Protection
WE
Write Enable
ALE
Address Latch Enable
CLE
Command Latch Enable
R/B
Ready/Busy Output
IO0 ~ IO7
Data Input/Output
Vcc
Power Supply
Vccq
Data Out Power
Vss
Ground
Pin Name
Pin Function
NC
No Connection
DNU
Do Not Use
NOTE :
1. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.
Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific purpose,
such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.
ORDERING INFORMATION
Samsung
MCP Memory(4chips)
Device Type
NAND + NAND + SDRAM+SDRAM
NOR Flash Density, Voltage,
Organization, Bank Size, Boot Block
00 = None
Access Time
411 : NAND Flash 50ns
NAND Flash 50ns
Mobile SDRAM 9ns
Mobile SDRAM 9ns
SDRAM Interface, Density,
Voltage, Organization, Option
3 = M-SDR, 256M+256M, 1.8V/1.8V, x16
U
t
RAM Density, Voltage, Organization
0 = None
Package
D = FBGA(Lead-Free)
NAND Flash Density, Voltage, Organization
F = 512M+512M, 1.8V/1.8V, x8
SRAM Density, Voltage, Organization
0 = None
KB E 00 G 0 0 3 M - D 411
Version
M = 1st Generation
相關(guān)PDF資料
PDF描述
KBE00G003M-D411 NAND 512Mb*2 + Mobile SDRAM 256Mb*2
KBE00S009M 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
KBE00S009M-D411 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
KBJ2501 25A SINGLE PHASE SILICON BRIDGE RECTIFIER
KBJ2502 25A SINGLE PHASE SILICON BRIDGE RECTIFIER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KBE00G003M-D411 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:NAND 512Mb*2 + Mobile SDRAM 256Mb*2
KBE00S003M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2
KBE00S003M-D411 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2
KBE00S009M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
KBE00S009M-D411 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
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