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參數(shù)資料
| 型號： | KBE00G003M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | NAND 512Mb*2 + Mobile SDRAM 256Mb*2 |
| 中文描述： | NAND閃存的512Mb * 2移動SDRAM 256Mb的* 2 |
| 文件頁數(shù)： | 66/89頁 |
| 文件大?。?/td> | 1238K |
| 代理商： | KBE00G003M |
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KBE00G003M-D411
MCP MEMORY
July 2005
66
Revision 0.1
tSS
*1
tSS
*2
Auto Refresh
Command
PRE
t
RP(min)
t
ARFC(min)
～
Auto
Refresh
CKE = High
CMD
An auto refresh command is issued by having CS, RAS and CAS held low with CKE and WE high at the rising edge of the
clock(CLK). All banks must be precharged and idle for t
RP
(min) before the auto refresh command is applied. No control of the external
address pins is required once this cycle has started because of the internal address counter. When the refresh cycle has completed,
all banks will be in the idle state. A delay between the auto refresh command and the next activate command or subsequent auto
refresh command must be greater than or equal to the t
ARFC
(min).
～
～
CLK
A Self Refresh command is defined by having CS, RAS, CAS and CKE held low with WE high at the rising edge of the clock. Once
the self Refresh command is initiated, CKE must be held low to keep the device in Self Refresh mode. After 1 clock cycle from the self
refresh command, all of the external control signals including system clock(CLK) can be disabled except CKE. The clock is internally
disabled during Self Refresh operation to reduce power. To exit the Self Refresh mode, supply stable clock input before returning CKE
high, assert deselect or NOP command and then assert CKE high. In case that the system uses burst auto refresh during normal
opreation, it is recommended to use burst auto refresh cycle immediately before entering self refresh mode and after exiting in self
refresh mode. On the other hand, if the system uses the distributed auto refresh, the system only has to keep the refresh duty cycle.
Self Refresh
Command
CKE
Stable Clock
t
SS
NOP
RSelf
CLK
t
SRFX(min)
t
SS
～
～
～
～
～
ACT
10. Clock Suspend Exit & Power Down Exit
11. Auto Refresh & Self Refresh
1) Clock Suspend (=Active Power Down) Exit
2) Power Down (=Precharge Power Down) Exit
CLK
CKE
Internal
CLK
CMD
RD
CLK
CKE
Internal
CLK
CMD
NOP ACT
相關PDF資料 |
PDF描述 |
|---|---|
| KBE00G003M-D411 | NAND 512Mb*2 + Mobile SDRAM 256Mb*2 |
| KBE00S009M | 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2 |
| KBE00S009M-D411 | 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2 |
| KBJ2501 | 25A SINGLE PHASE SILICON BRIDGE RECTIFIER |
| KBJ2502 | 25A SINGLE PHASE SILICON BRIDGE RECTIFIER |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| KBE00G003M-D411 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:NAND 512Mb*2 + Mobile SDRAM 256Mb*2 |
| KBE00S003M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2 |
| KBE00S003M-D411 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2 |
| KBE00S009M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND x 2 + 256Mb Mobile SDRAM x 2 |
| KBE00S009M-D411 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND x 2 + 256Mb Mobile SDRAM x 2 |
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