參數(shù)資料
型號: XCF128XFTG64C
廠商: Xilinx Inc
文件頁數(shù): 39/88頁
文件大?。?/td> 0K
描述: IC PROM SRL 128M GATE 64-FTBGA
標(biāo)準(zhǔn)包裝: 1
可編程類型: 系統(tǒng)內(nèi)可編程
存儲容量: 128Mb
電源電壓: 1.7 V ~ 2 V
工作溫度: -40°C ~ 85°C
封裝/外殼: 64-TBGA
供應(yīng)商設(shè)備封裝: 64-TFBGA
包裝: 托盤
產(chǎn)品目錄頁面: 601 (CN2011-ZH PDF)
其它名稱: 122-1578
Platform Flash XL High-Density Configuration and Storage Device
DS617 (v3.0.1) January 07, 2010
Product Specification
44
R
Table 24: Quality and Reliability Characteristics
Symbol
Description
Min
Max
Units
TDR
Data retention
20
Years
NPE
Program/erase cycles (Endurance)
10,000(1)
–Cycles
VESD
Electrostatic Discharge (ESD)
2,000
Volts
Notes:
1.
Program/erase cycles when VPP = VDDQ. See Table 21, page 44 for program/erase cycles when VPP = VPPH.
X-Ref Target - Figure 22
Figure 22: AC Measurement I/O Waveform
X-Ref Target - Figure 23
Notes:
1.
CL includes JIG capacitance.
Figure 23: AC Measurement Load Circuit
X-Ref Target - Figure 24
Notes:
1.
CL includes JIG capacitance.
Figure 24: Connecting the READY_WAIT Pin when Using the Device
V
DDQ
0V
DS617_17_032708
V
DDQ
2
V
DDQ
C
L
(1)
22 k
Ω
Device
Under
Test
0.1 F
V
DD
0.1 F
V
DDQ
22 k
Ω
DS617_18_101608
V
DDQ
C
L
(1)
4.7 k
Ω
Device
Under
Test
0.1 F
V
DD
0.1 F
V
DDQ
DS617_19_101608
READY_WAIT
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