參數(shù)資料
型號(hào): XCF128XFTG64C
廠(chǎng)商: Xilinx Inc
文件頁(yè)數(shù): 38/88頁(yè)
文件大?。?/td> 0K
描述: IC PROM SRL 128M GATE 64-FTBGA
標(biāo)準(zhǔn)包裝: 1
可編程類(lèi)型: 系統(tǒng)內(nèi)可編程
存儲(chǔ)容量: 128Mb
電源電壓: 1.7 V ~ 2 V
工作溫度: -40°C ~ 85°C
封裝/外殼: 64-TBGA
供應(yīng)商設(shè)備封裝: 64-TFBGA
包裝: 托盤(pán)
產(chǎn)品目錄頁(yè)面: 601 (CN2011-ZH PDF)
其它名稱(chēng): 122-1578
Platform Flash XL High-Density Configuration and Storage Device
DS617 (v3.0.1) January 07, 2010
Product Specification
43
R
Maximum Rating
Stressing the device above the rating listed in Table 22 might cause permanent damage to the device. These are stress
ratings only, and proper operation of the device at these or any other conditions above those indicated in this specification
is not implied. Exposure to Absolute Maximum Rating conditions for extended periods can affect device reliability.
DC and AC Parameters
This section summarizes the operating measurement conditions, and the DC and AC characteristics of the device. The
parameters in the DC and AC characteristics tables that follow are derived from tests performed under the measurement
conditions summarized in Table 23. Designers should check that the operating conditions in their circuit match the operating
conditions when relying on the quoted parameters.
Table 22: Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
Min
Max
TA
Ambient operating temperature
–40
85
°C
TBIAS
Temperature under bias
–40
85
°C
TJ
Junction temperature
125
°C
TSTG
Storage temperature
–65
125
°C
VIO
Input or output voltage
–0.5
4.2
V
VDD
Supply voltage
–0.2
2.5
V
VDDQ
Input/output supply voltage
–0.2
3.8
V
VPP
Program voltage
–0.2
10
V
IO
Output short circuit current
100
mA
TVPPH
Time for VPP at VPPH
100
hours
Table 23: Operating and AC Measurement Conditions
Parameter
Min
Max
Units
VDD supply voltage
1.7
2.0
V
VDDQ supply voltage
3.0
3.6
V
2.3
2.7
V
VPP supply voltage (Factory environment)
8.5
9.5
V
VPP supply voltage (Application environment)
–0.4
VDDQ+0.4
V
Ambient operating temperature
–40
85
°C
Load capacitance (CL)
30
pF
Input rise and fall times
–5
ns
Input pulse voltages
0 to VDDQ
V
Input and output timing reference voltages
VDDQ/2
V
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