參數(shù)資料
型號: S29WS128N0LBFW010
廠商: SPANSION LLC
元件分類: PROM
英文描述: 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
中文描述: 8M X 16 FLASH 1.8V PROM, 70 ns, PBGA84
封裝: 11.60 X 8 MM, LEAD FREE, PLASTIC, FBGA-84
文件頁數(shù): 94/95頁
文件大?。?/td> 1745K
代理商: S29WS128N0LBFW010
94
S29WSxxxN_00_F0 October 29, 2004
Pr e l i m i n a r y
Wraparound
Special burst read mode where the read address “wraps” or returns back to the lowest
address boundary in the selected range of words, after reading the last Byte or Word
in the range, e.g. for a 4 word range of 0 to 3, a read beginning at word 2 would read
words in the sequence 2, 3, 0, 1.
Write
Interchangeable term for a program/erase operation where the content of a register
and or memory location is being altered. The term write is often associated with
“writing command cycles” to enter or exit a particular mode of operation.
Write Buffer
Multi-word area in which multiple words may be programmed as a single operation. A
Write Buffer may be 16 to 32 words long and is located on a 16 or 32 word boundary
respectively.
Write Buffer Programming
Method of writing multiple words, up to the maximum size of the Write Buffer, in one
operation. Using Write Buffer Programming will result in
8 times faster programming
time than by using single word at a time programming commands.
Write Operation Status
Allows the host system to determine the status of a program or erase operation by
reading several special purpose register bits.
Term
Definition
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