參數(shù)資料
型號(hào): S29WS128N0LBFW010
廠商: SPANSION LLC
元件分類(lèi): PROM
英文描述: 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
中文描述: 8M X 16 FLASH 1.8V PROM, 70 ns, PBGA84
封裝: 11.60 X 8 MM, LEAD FREE, PLASTIC, FBGA-84
文件頁(yè)數(shù): 74/95頁(yè)
文件大?。?/td> 1745K
代理商: S29WS128N0LBFW010
76
S29WSxxxN_00_F0 October 29, 2004
Pr e l i m i n a r y
Notes:
1. PA = Program Address, PD = Program Data, VA = Valid Address for reading status bits.
2. “In progress” and “complete” refer to status of program operation.
3. A23–A14 for the WS256N (A22–A14 for the WS128N, A21–A14 for the WS064N) are don’t care during
command sequence unlock cycles.
4. Addresses are latched on the first rising edge of CLK.
5. Either CE# or AVD# is required to go from low to high in between programming command sequences.
6. The Synchronous programming operation is dependent of the Set Device Read Mode bit in the Configuration
Register. The Configuration Register must be set to the Synchronous Read Mode.
Figure 11.14. Synchronous Program Operation Timings: CLK Latched Addresses
OE#
CE#
Data
Addresses
AVD
WE#
CLK
VCC
555h
PD
tWC
tWPH
tWP
PA
tVCS
tDH
tCH
In
Progress
tWHWH1
VA
Complete
VA
Program Command Sequence (last two cycles)
Read Status Data
tDS
tAVDP
A0h
tAS
tCAS
tAH
tAVCH
tCSW
tAVSC
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