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參數(shù)資料
| 型號： | S29WS128N0LBFW010 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| 中文描述： | 8M X 16 FLASH 1.8V PROM, 70 ns, PBGA84 |
| 封裝： | 11.60 X 8 MM, LEAD FREE, PLASTIC, FBGA-84 |
| 文件頁數(shù)： | 33/95頁 |
| 文件大小： | 1745K |
| 代理商： | S29WS128N0LBFW010 |
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October 29, 2004 S29WSxxxN_00_F0
39
Pre l i m i n a r y
and updates the status bits. Addresses are “don't-cares” when writing the Program Suspend
command.
After the programming operation has been suspended, the system can read array data from
any non-suspended sector. The Program Suspend command may also be issued during a pro-
gramming operation while an erase is suspended. In this case, data may be read from any
addresses not in Erase Suspend or Program Suspend. If a read is needed from the SecSi Sec-
tor area, then user must use the proper command sequences to enter and exit this region.
The system may also write the Autoselect command sequence when the device is in Program
Suspend mode. The device allows reading Autoselect codes in the suspended sectors, since
the codes are not stored in the memory array. When the device exits the Autoselect mode,
the device reverts to Program Suspend mode, and is ready for another valid operation. See
“Autoselect Command Sequence” for more information.
After the Program Resume command is written, the device reverts to programming. The sys-
tem can determine the status of the program operation using the DQ7 or DQ6 status bits, just
as in the standard program operation. See “Write Operation Status” for more information.
The system must write the Program Resume command (address bits are “don't care”) to exit
the Program Suspend mode and continue the programming operation. Further writes of the
Program Resume command are ignored. Another Program Suspend command can be written
after the device has resumed programming.
The following is a C source code example of using the program suspend function. Refer to the
Spansion Low Level Driver User’s Guide (available on www.amd.com and www.fujitsu.com)
for general information on Spansion Flash memory software development guidelines.
/* Example: Program suspend command */
*( (UINT16 *)base_addr + 0x000 ) = 0x00B0;
/* write suspend command
*/
The following is a C source code example of using the program resume function. Refer to the
Spansion Low Level Driver User’s Guide (available on www.amd.com and www.fujitsu.com)
for general information on Spansion Flash memory software development guidelines.
/* Example: Program resume command */
*( (UINT16 *)base_addr + 0x000 ) = 0x0030;
/* write resume command
*/
7.5.7 Accelerated Program/Chip Erase
Accelerated single word programming, write buffer programming, sector erase, and chip
erase operations are enabled through the ACC function. This method is faster than the stan-
dard chip program and erase command sequences.
Software Functions and Sample Code
Table 7.28. Program Suspend
(LLD Function = lld_ProgramSuspendCmd)
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Bank Address
00B0h
Table 7.29. Program Resume
(LLD Function = lld_ProgramResumeCmd)
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Bank Address
0030h
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29WS128N0LBFW011 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS128N0LBFW012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS128N0LBFW013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS128N0LBFW110 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS128N0LBFW111 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
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