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參數(shù)資料
| 型號： | S29WS128N0LBFW010 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| 中文描述： | 8M X 16 FLASH 1.8V PROM, 70 ns, PBGA84 |
| 封裝： | 11.60 X 8 MM, LEAD FREE, PLASTIC, FBGA-84 |
| 文件頁數(shù)： | 52/95頁 |
| 文件大?。?/td> | 1745K |
| 代理商： | S29WS128N0LBFW010 |
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S29WSxxxN_00_F0 October 29, 2004
Pr e l i m i n a r y
8.7.3 Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data
during VCC power-up and power-down.
The command register and all internal program/erase circuits are disabled, and the device
resets to reading array data. Subsequent writes are ignored until VCC is greater than VLKO.
The system must provide the proper signals to the control inputs to prevent unintentional
writes when VCC is greater than VLKO.
8.7.4 Write Pulse “Glitch Protection”
Noise pulses of less than 3 ns (typical) on OE#, CE# or WE# do not initiate a write cycle.
8.7.5 Power-Up Write Inhibit
If WE# = CE# = RESET# = VIL and OE# = VIH during power up, the device does not accept
commands on the rising edge of WE#. The internal state machine is automatically reset to
the read mode on power-up.
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| S29WS128N0LBFW011 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS128N0LBFW012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS128N0LBFW013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS128N0LBFW110 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS128N0LBFW111 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
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