參數(shù)資料
型號： S29WS128N0LBFW010
廠商： SPANSION LLC
元件分類： PROM
英文描述： 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
中文描述： 8M X 16 FLASH 1.8V PROM, 70 ns, PBGA84
封裝： 11.60 X 8 MM, LEAD FREE, PLASTIC, FBGA-84
文件頁數(shù)： 32/95頁
文件大?。?/td> 1745K
代理商： S29WS128N0LBFW010
38
S29WSxxxN_00_F0 October 29, 2004
Pr e l i m i n a r y
ever, when the Erase Suspend command is written during the sector erase time-out, the
device immediately terminates the time-out period and suspends the erase operation.
After the erase operation has been suspended, the bank enters the erase-suspend-read
mode. The system can read data from or program data to any sector not selected for erasure.
(The device “erase suspends” all sectors selected for erasure.) Reading at any address within
erase-suspended sectors produces status information on DQ7-DQ0. The system can use DQ7,
or DQ6, and DQ2 together, to determine if a sector is actively erasing or is erase-suspended.
Refer to Table 7.35 for information on these status bits.
After an erase-suspended program operation is complete, the bank returns to the erase-sus-
pend-read mode. The system can determine the status of the program operation using the
DQ7 or DQ6 status bits, just as in the standard program operation.
In the erase-suspend-read mode, the system can also issue the Autoselect command se-
quence. Refer to the “Write Buffer Programming Operation” section and the “Autoselect
Command Sequence” section for details.
To resume the sector erase operation, the system must write the Erase Resume command.
The bank address of the erase-suspended bank is required when writing this command. Fur-
ther writes of the Resume command are ignored. Another Erase Suspend command can be
written after the chip has resumed erasing.
The following is a C source code example of using the erase suspend function. Refer to the
Spansion Low Level Driver User’s Guide (available on www.amd.com and www.fujitsu.com)
for general information on Spansion Flash memory software development guidelines.
/* Example: Erase suspend command */
*( (UINT16 *)bank_addr + 0x000 ) = 0x00B0;
/* write suspend command
*/
The following is a C source code example of using the erase resume function. Refer to the
Spansion Low Level Driver User’s Guide (available on www.amd.com and www.fujitsu.com)
for general information on Spansion Flash memory software development guidelines.
/* Example: Erase resume command */
*( (UINT16 *)bank_addr + 0x000 ) = 0x0030;
/* write resume command
*/
/* The flash needs adequate time in the resume state */
7.5.6 Program Suspend/Program Resume Commands
The Program Suspend command allows the system to interrupt an embedded programming
operation or a “Write to Buffer” programming operation so that data can read from any non-
suspended sector. When the Program Suspend command is written during a programming
process, the device halts the programming operation within tPSL (program suspend latency)
Software Functions and Sample Code
Table 7.26. Erase Suspend
(LLD Function = lld_EraseSuspendCmd)
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Bank Address
00B0h
Table 7.27. Erase Resume
(LLD Function = lld_EraseResumeCmd)
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Bank Address
0030h
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29WS128N0LBFW011 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFW012 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFW013 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFW110 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFW111 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
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