參數(shù)資料
型號(hào)： S29WS128N0LBFW010
廠商： SPANSION LLC
元件分類： PROM
英文描述： 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
中文描述： 8M X 16 FLASH 1.8V PROM, 70 ns, PBGA84
封裝： 11.60 X 8 MM, LEAD FREE, PLASTIC, FBGA-84
文件頁(yè)數(shù)： 62/95頁(yè)
文件大?。?/td> 1745K
代理商： S29WS128N0LBFW010
October 29, 2004 S29WSxxxN_00_F0
65
Pre l i m i n a r y
11.7 DC Characteristics (CMOS Compatible)
Notes:
1. Maximum ICC specifications are tested with VCC = VCCmax.
2. VCC= VIO.
3. CE# must be set high when measuring the RDY pin.
4. The ICC current listed is typically less than 3 mA/MHz, with OE# at VIH.
5. ICC active while Embedded Erase or Embedded Program is in progress.
6. Device enters automatic sleep mode when addresses are stable for tACC + 20 ns.
Typical sleep mode current is equal to ICC3.
7. VIH = VCC ± 0.2 V and VIL > –0.1 V.
8. Total current during accelerated programming is the sum of VACC and VCC
currents.
9. VACC = VHH on ACC input.
Parameter
Description (Notes)
Test Conditions (Notes 1, 2, 9)
Min
Typ
Max
Unit
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCCmax
±1
A
ILO
Output Leakage Current (3)
VOUT = VSS to VCC, VCC = VCCmax
±1
A
ICCB
VCC Active burst Read Current
CE# = VIL, OE# = VIH, WE#
= VIH, burst length = 8
54 MHz
27
54
mA
66 MHz
28
60
mA
80 MHz
30
66
mA
CE# = VIL, OE# = VIH, WE#
= VIH, burst length = 16
54 MHz
28
48
mA
66 MHz
30
54
mA
80 MHz
32
60
mA
CE# = VIL, OE# = VIH, WE#
= VIH, burst length = 32
54 MHz
29
42
mA
66 MHz
32
48
mA
80 MHz
34
54
mA
CE# = VIL, OE# = VIH, WE#
= VIH, burst length =
Continuous
54 MHz
32
36
mA
66 MHz
35
42
mA
80 MHz
38
48
mA
IIO1
VIO Non-active Output
OE# = VIH
20
30
A
ICC1
VCC Active Asynchronous
Read Current (4)
CE# = VIL, OE# = VIH, WE#
= VIH
10 MHz
27
36
mA
5 MHz
13
18
mA
1 MHz
3
4
mA
ICC2
VCC Active Write Current (5)
CE# = VIL, OE# = VIH, ACC
= VIH
VACC
15
A
VCC
19
52.5
mA
ICC3
VCC Standby Current (6, 7)
CE# = RESET# =
VCC ± 0.2 V
VACC
15
A
VCC
20
40
A
ICC4
VCC Reset Current (7)
RESET# = VIL, CLK = VIL
70
150
A
ICC5
VCC Active Current
(Read While Write) (7)
CE# = VIL, OE# = VIH, ACC = VIH
50
60
mA
ICC6
VCC Sleep Current (7)
CE# = VIL, OE# = VIH
240
A
IACC
Accelerated Program Current (8)
CE# = VIL, OE# = VIH,
VACC = 9.5 V
VACC
620
mA
VCC
14
20
mA
VIL
Input Low Voltage
VIO = 1.8 V
–0.5
0.4
V
VIH
Input High Voltage
VIO = 1.8 V
VIO – 0.4
VIO + 0.4
V
VOL
Output Low Voltage
IOL = 100 A, VCC = VCC min = VIO
0.1
V
VOH
Output High Voltage
IOH = –100 A, VCC = VCC min = VIO
VIO – 0.1
V
VHH
Voltage for Accelerated Program
8.5
9.5
V
VLKO
Low VCC Lock-out Voltage
1.0
1.4
V
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