參數(shù)資料
型號： S29WS128N0LBFW010
廠商： SPANSION LLC
元件分類： PROM
英文描述： 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
中文描述： 8M X 16 FLASH 1.8V PROM, 70 ns, PBGA84
封裝： 11.60 X 8 MM, LEAD FREE, PLASTIC, FBGA-84
文件頁數(shù)： 88/95頁
文件大?。?/td> 1745K
代理商： S29WS128N0LBFW010
October 29, 2004 S29WSxxxN_00_F0
89
Pre l i m i n a r y
Table 12.4. System Interface String
Addresses
Data
Description
1Bh
0017h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
0019h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
0006h
Typical timeout per single byte/word write 2N s
20h
0009h
Typical timeout for Min. size buffer write 2N s (00h = not supported)
21h
000Ah
Typical timeout per individual block erase 2N ms
22h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
0004h
Max. timeout for byte/word write 2N times typical
24h
0004h
Max. timeout for buffer write 2N times typical
25h
0003h
Max. timeout per individual block erase 2N times typical
26h
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
Table 12.5. Device Geometry Definition
Addresses
Data
Description
27h
0019h (WS256N)
0018h (WS128N)
0017h (WS064N)
Device Size = 2N byte
28h
29h
0001h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
0006h
0000h
Max. number of bytes in multi-byte write = 2N
(00h = not supported)
2Ch
0003h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
0003h
0000h
0080h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
00FDh (WS256N)
007Dh (WS128N)
003Dh (WS064N)
Erase Block Region 2 Information
32h
33h
34h
0000h
0002h
35h
36h
37h
38h
0003h
0000h
0080h
0000h
Erase Block Region 3 Information
39h
3Ah
3Bh
3Ch
0000h
Erase Block Region 4 Information
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