參數資料
型號: S29WS128N0LBFW010
廠商: SPANSION LLC
元件分類: PROM
英文描述: 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
中文描述: 8M X 16 FLASH 1.8V PROM, 70 ns, PBGA84
封裝: 11.60 X 8 MM, LEAD FREE, PLASTIC, FBGA-84
文件頁數: 27/95頁
文件大?。?/td> 1745K
代理商: S29WS128N0LBFW010
October 29, 2004 S29WSxxxN_00_F0
33
Pre l i m i n a r y
Figure 7.22. Write Buffer Programming Operation
7.5.3 Sector Erase
The sector erase function erases one or more sectors in the memory array. (See Table 12.1,
require the system to preprogram prior to erase. The Embedded Erase algorithm automati-
cally programs and verifies the entire memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any controls or timings during these operations.
After the command sequence is written, a sector erase time-out of no less than tSEA occurs.
During the time-out period, additional sector addresses and sector erase commands may be
written. Loading the sector erase buffer may be done in any sequence, and the number of
Write Unlock Cycles:
Address 555h, Data AAh
Address 2AAh, Data 55h
Issue
Write Buffer Load Command:
Address 555h, Data 25h
Load Word Count to Program
Program Data to Address:
SA = wc
Unlock Cycle 1
Unlock Cycle 2
wc = number of words – 1
Yes
No
wc = 0?
Write Buffer
Abort Desired?
Write Buffer
Abort?
Polling Status
= Done?
Error?
FAIL. Issue reset command
to return to read array mode.
Write to a Different
Sector Address to Cause
Write Buffer Abort
PASS. Device is in
read mode.
Confirm command:
SA 29h
Wait 4
s
Perform Polling Algorithm
(see Write Operation Status
flowchart)
Write Next Word,
Decrement wc:
PA
data , wc = wc – 1
RESET. Issue Write Buffer
Abort Reset Command
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