
MC68F375
CDR MoneT FLASH FOR THE IMB3 (CMFI)
MOTOROLA
REFERENCE MANUAL
Rev. 25 June 03
10-27
a programming write no programming voltages will be applied to the corre-
sponding word in the array. Also, at this point writes to the program page buffers
are disabled until SES has been cleared and set.
7. Read the CMFICTL1 register until HVS = 0.
8. Write EHV = 0 in CMFICTL2.
9. Program Verify. Read the words of the pages that are being programmed.
Reads. If any bit is a 1 after reading all of the locations that are being pro-
grammed go to step 5. If all the locations verify as programmed go to step 9.
WARNING
After a program pulse, read at least one location with IADDR[5] = 0
and one location with IADDR[5] = 1 on each programmed page. Fail-
ure to do so may result in the loss of information in the CMFI
EEPROM array. While this will not physically damage the array it will
require that a full erase of all blocks being programmed be done
before the CMFI EEPROM can be used reliably.
To reduce the time for verification, read only two locations in each array block
that is being programmed after reading a non-programmed bit. The first location
must be a location with IADDR[5] = 0; while, the second must use IADDR[5] =
1. Also, after a location has been fully verified (all bits are programmed) it is not
necessary to verify the location as no further programming voltages will be ap-
plied to the drain of the corresponding bits.
10. If the margin read is successful, then write SES = 0 in the CMFCTL register,
otherwise do the following:
a. Write new pulse width parameters (if required per Table 10-6) - SCLKR,
CLKPE, CLKPM.
b. Write new values for PAWS, NVR, and GDB (if required per Table 10-6).
c. Go back to step 6 to apply additional programming pulses.
11. If more information needs to be programmed, go back to step 2.
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Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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