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參數(shù)資料
| 型號： | 935270538118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 總線控制器 |
| 英文描述： | UNIVERSAL SERIAL BUS CONTROLLER, PQFP64 |
| 封裝： | 10 X 10 MM, 1.40 MM HEIGHT, PLASTIC, MS-026, SOT-314-2, LQFP-64 |
| 文件頁數(shù)： | 27/93頁 |
| 文件大?。?/td> | 2118K |
| 代理商： | 935270538118 |
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Philips Semiconductors
ISP1160
Embedded USB Host Controller
Product data
Rev. 03 — 27 February 2003
33 of 89
9397 750 10765
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9.8.1
Using internal OC detection circuit
The internal OC detection circuit can be used only when VCC (pin 56) is connected to
a 5 V power supply. The HCD must set AnalogOCEnable, bit 10 of the
HcHardwareConguration register, to logic 1.
An application using the internal OC detection circuit and internal 15 k
pull-down
resistors is shown in Figure 26, where H_DMn denotes either pin H_DM1 or H_DM2,
while H_DPn denotes either pin H_DP1 or H_DP2. In this example, the HCD must set
both AnalogOCEnable and DownstreamPort15KresistorSel to logic 1. They are bit 10
and bit 12 of the HcHardwareConguration register, respectively.
When H_OCn detects an overcurrent status on a downstream port, H_PSWn will
output HIGH, a logic 1 to turn off the 5 V power supply to the downstream port VBUS.
When there is no such detection, H_PSWn will output LOW, a logic 0 to turn on the
5 V power supply to the downstream port VBUS.
In general applications, we can use a P-channel MOSFET as the power switch for
VBUS. Connect the 5 V power supply to the drain pole of the P-channel MOSFET,
VBUS to the source pole, and H_PSWn to the gate pole. We call the voltage drop (V)
across the drain and source poles the overcurrent trip voltage. For the internal
overcurrent detection circuit, a voltage comparator has been designed-in, with a
nominal voltage threshold of 75 mV. Therefore, when the overcurrent trip voltage (
V)
exceeds the voltage threshold, H_PSWn will output a HIGH level, logic 1 to turn off
the P-channel MOSFET. If the P-channel MOSFET has a RDSon of 150 m, the
overcurrent threshold will be 500 mA. The selection of a P-channel MOSFET with a
different RDSon will result in a different overcurrent threshold.
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