參數(shù)資料
型號: 28F640C3
廠商: Intel Corp.
英文描述: 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導(dǎo)塊閃速存儲器)
中文描述: 3伏高級啟動塊閃存(3伏高級快速引導(dǎo)塊閃速存儲器)
文件頁數(shù): 62/70頁
文件大?。?/td> 894K
代理商: 28F640C3
28F800C3, 28F160C3, 28F320C3, 28F640C3
56
3UHOLPLQDU\
NOTE:
1. The variable P is a pointer which is defined at CFI offset 15h.
Table 20. Protection Register Information
Offset(1)
P = 35h
Length
Description
(Optional Flash Features and Commands)
Address
Hex
Code
Value
(P+E)h
1
Number of Protection register fields in JEDEC ID space.
“00h,” indicates that 256 protection bytes are available
43:
--01
01
(P+F)h
(P+10)h
(P+11)h
4
44:
45:
46:
--80
--00
--03
80h
00h
8 byte
Protection Field 1: Protection Description
(P+12)h
This field describes user-available One Time Programmable (OTP)
Protection register bytes. Some are pre-programmed with device-
unique serial numbers. Others are user programmable. Bits 0–15
point to the Protection register Lock byte, the section’s first byte.
The following bytes are factory pre-programmed and user-
programmable.
bits 0–7 = Lock/bytes JEDEC-plane physical low address
bits 8–15 = Lock/bytes JEDEC -plane physical high address
bits 16–23 = “n” such that 2
n
= factory pre-programmed bytes
bits 24–31 = “n” such that 2
n
= user programmable bytes
47:
--03
8 byte
(P+13)h
Reserved for future use
48:
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