參數(shù)資料
型號: 28F640C3
廠商: Intel Corp.
英文描述: 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導(dǎo)塊閃速存儲器)
中文描述: 3伏高級啟動塊閃存(3伏高級快速引導(dǎo)塊閃速存儲器)
文件頁數(shù): 36/70頁
文件大?。?/td> 894K
代理商: 28F640C3
28F800C3, 28F160C3, 28F320C3, 28F640C3
30
3UHOLPLQDU\
AC Characteristics—Read Operations, continued
NOTES:
1. OE# may be delayed up to t
t
GLQV
after the falling edge of CE# without impact on t
ELQV
.
2. Sampled, but not 100% tested.
See
Figure 8, “AC Waveform: Read Operations” on page 32
.
See
Figure 6, “Input/Output Reference Waveform” on page 27
for timing measurements and maximum
allowable input slew rate.
#
Sym
Par
ame
ter
Density
32 Mbit
Unit
Product
80 ns
90 ns
100 ns
110 ns
V
CC
2.7 V–3.3 V
2.7 V–3.3 V
3.0 V–3.3 V
2.7 V–3.3 V
3.0 V–3.3 V
2.7 V–3.3 V
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
R1
t
AVAV
Read Cycle Time
Address to
Output Delay
CE# to Output
Delay
(1)
OE# to Output
Delay
RP# to Output
Delay
CE# to Output in
Low Z
(2)
OE# to Output in
Low Z
CE# to Output in
High Z
(2)
OE# to Output in
High Z
(2)
Output Hold from
Address, CE#, or
OE# Change,
Whichever
Occurs First
(2)
80
90
90
100
100
110
ns
R2
t
AVQV
80
90
90
100
100
110
ns
R3
t
ELQV
80
90
90
100
100
110
ns
R4
t
GLQV
20
20
30
30
30
30
ns
R5
t
PHQV
150
150
150
150
150
150
ns
R6
t
ELQX
0
0
0
0
0
0
ns
R7
t
GLQX
0
0
0
0
0
0
ns
R8
t
EHQZ
20
20
20
20
20
20
ns
R9
t
GHQZ
20
20
20
20
20
20
ns
R10
t
OH
0
0
0
0
0
0
ns
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