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參數(shù)資料
| 型號(hào)： | 28F640C3 |
| 廠商： | Intel Corp. |
| 英文描述： | 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器) |
| 中文描述： | 3伏高級(jí)啟動(dòng)塊閃存（3伏高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 29/70頁(yè) |
| 文件大?。?/td> | 894K |
| 代理商： | 28F640C3 |
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28F800C3, 28F160C3, 28F320C3, 28F640C3
3UHOLPLQDU\
23
4.0
Electrical Specifications
4.1
Absolute Maximum Ratings
NOTES:
1.
Minimum DC voltage is –0.5 V on input/output pins. During transitions, this level may undershoot to –2.0 V
for periods <20 ns. Maximum DC voltage on input/output pins is V
CC
+0.5 V which, during transitions, may
overshoot to V
CC
+2.0 V for periods <20 ns.
2. Maximum DC voltage on V
PP
may overshoot to +14.0 V for periods <20 ns.
3. V
PP
Program voltage is normally 1.65 V–3.6 V. Connection to a 11.4 V–12.6 V supply can be done for a
maximum of 1000 cycles on the main blocks and 2500 cycles on the parameter blocks during program/erase.
V
PP
may be connected to 12 V for a total of 80 hours maximum. See
Section 3.5
for details.
4. Output shorted for no more than one second. No more than one output shorted at a time.
Warning:
Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent damage.
These are stress ratings only. Operation beyond the “Operating Conditions” is not recommended
and extended exposure beyond the “Operating Conditions” may affect device reliability.
Parameter
Maximum Rating
Extended Operating Temperature
During Read
–40 °C to +85 °C
During Block Erase and Program
–40 °C to +85 °C
Temperature under Bias
–40 °C to +85 °C
Storage Temperature
–65 °C to +125 °C
–0.5 V to +3.7 V
(1)
–0.5 V to +13.5 V
(1,2,3)
Voltage On Any Pin (except V
CC
and V
PP
) with Respect to GND
V
PP
Voltage (for Block Erase and Program) with Respect to GND
V
CC
and V
CCQ
Supply Voltage with Respect to GND
Output Short Circuit Current
–0.2 V to +3.6 V
100 mA
(4)
NOTICE:
This datasheet contains preliminary information on new products in production. Specifications are
subject to change without notice. Verify with your local Intel Sales office that you have the latest datasheet before
finalizing a design
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F640J3C-120 | Intel StrataFlash Memory (J3) |
| 28LV64A | 64K (8K x 8) Low Voltage CMOS EEPROM(低壓,64K位, CMOS 并行EEPROM) |
| 28M0U | 60V 300mA MONOLITHIC DIODE ARRAY |
| 28M0DC | 60V 300mA MONOLITHIC DIODE ARRAY |
| 28M0DS | 60V 300mA MONOLITHIC DIODE ARRAY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F640C3BC80 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 28F640J3C120 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 28F640J3C-120 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 28F640J3D75 | 制造商:Intel 功能描述: 制造商: 功能描述: 制造商:undefined 功能描述: |
| 28F640J5 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:5 Volt Intel StrataFlash? Memory |
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