參數(shù)資料
型號: 28F640C3
廠商: Intel Corp.
英文描述: 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導塊閃速存儲器)
中文描述: 3伏高級啟動塊閃存(3伏高級快速引導塊閃速存儲器)
文件頁數(shù): 3/70頁
文件大小: 894K
代理商: 28F640C3
28F800C3, 28F160C3, 28F320C3, 28F640C3
3UHOLPLQDU\
iii
Contents
1.0
Introduction
..................................................................................................................1
1.1
Product Overview..................................................................................................2
Product Description
..................................................................................................3
2.1
Package Pinouts ...................................................................................................3
2.2
Block Organization................................................................................................7
2.2.1
Parameter Blocks.....................................................................................7
2.2.2
Main Blocks..............................................................................................7
Principles of Operation
............................................................................................7
3.1
Bus Operation .......................................................................................................7
3.1.1
Read.........................................................................................................7
3.1.2
Output Disable..........................................................................................8
3.1.3
Standby....................................................................................................8
3.1.4
Reset........................................................................................................8
3.1.5
Write.........................................................................................................9
3.2
Modes of Operation...............................................................................................9
3.2.1
Read Array...............................................................................................9
3.2.2
Read Configuration ................................................................................10
3.2.3
Read Status Register.............................................................................10
3.2.4
Read Query............................................................................................11
3.2.5
Program Mode........................................................................................11
3.2.6
Erase Mode............................................................................................12
3.3
Flexible Block Locking.........................................................................................15
3.3.1
Locking Operation ..................................................................................16
3.3.2
Unlocked State.......................................................................................16
3.3.3
Lock-Down State....................................................................................16
3.3.4
Reading a Block’s Lock Status...............................................................17
3.3.5
Locking Operations during Erase Suspend............................................17
3.3.6
Status Register Error Checking..............................................................17
3.4
128-Bit Protection Register .................................................................................18
3.4.1
Reading the Protection Register ............................................................18
3.4.2
Programming the Protection Register....................................................19
3.4.3
Locking the Protection Register .............................................................19
3.5
V
PP
Program and Erase Voltages.......................................................................19
3.5.1
Improved 12 Volt Production Programming ...........................................19
3.5.2
V
PP
V
PPLK
for Complete Protection.....................................................20
3.6
Power Consumption............................................................................................20
3.6.1
Active Power (Program/Erase/Read) .....................................................20
3.6.2
Automatic Power Savings (APS)............................................................21
3.6.3
Standby Power.......................................................................................21
3.6.4
Deep Power-Down Mode .......................................................................21
3.7
Power-Up/Down Operation .................................................................................21
3.7.1
RP# Connected to System Reset...........................................................21
3.7.2
V
CC
, V
PP
and RP# Transitions...............................................................22
3.8
Power Supply Decoupling...................................................................................22
2.0
3.0
相關PDF資料
PDF描述
28F640J3C-120 Intel StrataFlash Memory (J3)
28LV64A 64K (8K x 8) Low Voltage CMOS EEPROM(低壓,64K位, CMOS 并行EEPROM)
28M0U 60V 300mA MONOLITHIC DIODE ARRAY
28M0DC 60V 300mA MONOLITHIC DIODE ARRAY
28M0DS 60V 300mA MONOLITHIC DIODE ARRAY
相關代理商/技術參數(shù)
參數(shù)描述
28F640C3BC80 制造商: 功能描述: 制造商:undefined 功能描述:
28F640J3C120 制造商: 功能描述: 制造商:undefined 功能描述:
28F640J3C-120 制造商: 功能描述: 制造商:undefined 功能描述:
28F640J3D75 制造商:Intel 功能描述: 制造商: 功能描述: 制造商:undefined 功能描述:
28F640J5 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:5 Volt Intel StrataFlash? Memory