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參數(shù)資料
| 型號(hào)： | 28F640C3 |
| 廠商： | Intel Corp. |
| 英文描述： | 3 Volt Advanced Boot Block Flash Memory(3 V 高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器) |
| 中文描述： | 3伏高級(jí)啟動(dòng)塊閃存（3伏高級(jí)快速引導(dǎo)塊閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 55/70頁(yè) |
| 文件大?。?/td> | 894K |
| 代理商： | 28F640C3 |
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28F800C3, 28F160C3, 28F320C3, 28F640C3
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49
Figure 16. Protection Register Programming Flowchart
Start
Write C0H
(Protection Reg.
Program Setup)
Write Protect. Register
Address/Data
Read Status Register
SR.7 = 1
Full Status
Check if Desired
Program Complete
Read Status Register
Data (See Above)
V
PP
Range Error
Protection Register
Programming Error
Attempted Program to
Locked Register -
Aborted
Program Successful
SR.3, SR.4 =
SR.1, SR.4 =
SR.1, SR.4 =
FULL STATUS CHECK PROCEDURE
Bus Operation
Write
Write
Standby
Protection Program operations can only be addressed within the protection
register address space. Addresses outside the defined space will return an
error.
Repeat for subsequent programming operations.
SR Full Status Check can be done after each program or after a sequence of
program operations.
Write FFH after the last program operation to reset device to read array mode.
Bus Operation
Standby
Standby
SR.3 MUST be cleared, if set during a program attempt, before further
attempts are allowed by the Write State Machine.
SR.1, SR.3 and SR.4 are only cleared by the Clear Staus Register Command,
in cases of multiple protection register program operations before full status is
checked.
If an error is detected, clear the status register before attempting retry or other
error recovery.
No
Yes
1, 1
0,1
1,1
Command
Protection Program
Setup
Protection Program
Comments
Data = C0H
Data = Data to Program
Addr = Location to Program
Check SR.7
1 = WSM Ready
0 = WSM Busy
Command
Comments
SR.1 SR.3 SR.4
0 1 1 V
PP
Low
0 0 1 Prot. Reg.
Prog. Error
1 0 1 Register
Locked:
Aborted
Read
Status Register Data Toggle
CE# or OE# to Update Status
Register Data
Standby
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F640J3C-120 | Intel StrataFlash Memory (J3) |
| 28LV64A | 64K (8K x 8) Low Voltage CMOS EEPROM(低壓,64K位, CMOS 并行EEPROM) |
| 28M0U | 60V 300mA MONOLITHIC DIODE ARRAY |
| 28M0DC | 60V 300mA MONOLITHIC DIODE ARRAY |
| 28M0DS | 60V 300mA MONOLITHIC DIODE ARRAY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F640C3BC80 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 28F640J3C120 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 28F640J3C-120 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 28F640J3D75 | 制造商:Intel 功能描述: 制造商: 功能描述: 制造商:undefined 功能描述: |
| 28F640J5 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:5 Volt Intel StrataFlash? Memory |
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