參數(shù)資料
型號： 28F640C3
廠商： Intel Corp.
英文描述： 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導(dǎo)塊閃速存儲器)
中文描述： 3伏高級啟動塊閃存（3伏高級快速引導(dǎo)塊閃速存儲器）
文件頁數(shù)： 31/70頁
文件大小： 894K
代理商： 28F640C3
28F800C3, 28F160C3, 28F320C3, 28F640C3
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25
4.4
DC Characteristics
Sym
Parameter
V
CC
2.7 V—3.6 V
(2)
Unit
Test Conditions
V
CCQ
Note
Typ
Max
I
LI
Input Load Current
1,2
±
1
μA
V
CC
= V
CC
Max, V
CCQ
= V
CCQ
Max
V
IN
= V
CCQ
or GND
I
LO
Output Leakage Current
1,2
0.2
±
10
μA
V
CC
= V
CC
Max, V
CCQ
= V
CCQ
Max
V
IN
= V
CCQ
or GND
I
CCS
V
Standby Current for 0.18
Micron Product
1
7
15
μA
V
CC
= V
CC
Max, CE# = RP# = V
CCQ
WP# = V
CCQ
or GND
V
Standby Current for 0.25
Micron and 0.4 Micron Product
1
10
25
μA
V
CC
= V
CC
Max, CE# = RP# = V
CCQ
WP# = V
CCQ
or GND
I
CCD
V
Deep Power-Down Current
for 0.18 Micron Product
1,2
7
15
μA
V
CC
= V
CC
Max, V
CCQ
= V
CCQ
Max
V
IN
= V
CCQ
or GND, RP# = GND ± 0.2 V
V
CC
Deep Power-Down Current
for 0.25 Micron and 0.4 Micron
Product
1,2
7
25
μA
V
CC
= V
CC
Max, V
CCQ
= V
CCQ
Max
V
IN
= V
CCQ
or GND, RP# = GND ± 0.2 V
I
CCR
V
CC
Read Current
1,2,3
9
18
mA
V
CC
= V
CC
Max, V
CCQ
= V
CCQ
Max
OE# = V
IH
, CE# = V
IL
,
f = 5 MHz,
I
OUT
= 0 mA, Inputs = V
IL
or V
IH
I
CCW
V
CC
Program Current
1,4
18
55
mA
V
PP
= V
PP1
,
Program in Progress
8
15
mA
V
PP
= V
PP2
(12 V), Program in Progress
I
CCE
V
CC
Erase Current
1,4
16
45
mA
V
PP
= V
PP1,
Erase in Progress
8
15
mA
V
PP
= V
PP2
(12 V), Erase in Progress
I
CCES
V
CC
Erase Suspend Current for
0.18 Micron Product
1,4,5
7
15
μA
CE# = V
IH
, Erase Suspend in Progress
V
CC
Erase Suspend Current for
0.25 Micron and 0.4 Micron
Product
1,4,5
10
25
μA
CE# = V
IH
, Erase Suspend in Progress
I
CCWS
V
Program Suspend Current
for 0.18 Micron Product
1,4,5
7
15
μA
CE# = V
IH
, Program
Suspend in Progress
V
CC
Program Suspend Current
for 0.25 Micron and 0.4 Micron
Product
1,4,5
10
25
μA
CE# = V
IH
, Program
Suspend in Progress
I
PPD
V
PP
Deep Power-Down Current
1
0.2
5
μA
RP# = GND ± 0.2 V, V
PP
≤
V
CC
V
PP
≤
V
CC
V
PP
≤
V
CC
V
PP
≥
V
CC
I
PPS
V
PP
Standby Current
1
0.2
5
μA
I
PPR
V
PP
Read Current
1
2
±
15
μA
1,4
50
200
μA
I
PPW
V
PP
Program Current
1,4
0.05
0.1
mA
V
PP
=V
PP1
,
Program in Progress
8
22
mA
V
PP
= V
PP2
(12 V), Program in Progress
I
PPE
V
PP
Erase Current
1,4
0.05
0.1
mA
V
PP
= V
PP1
,
Program in Progress
8
22
mA
V
PP
= V
PP2
(12 V), Program in Progress
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