參數(shù)資料
型號： 28F640C3
廠商： Intel Corp.
英文描述： 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導(dǎo)塊閃速存儲器)
中文描述： 3伏高級啟動塊閃存（3伏高級快速引導(dǎo)塊閃速存儲器）
文件頁數(shù)： 32/70頁
文件大?。?/td> 894K
代理商： 28F640C3
28F800C3, 28F160C3, 28F320C3, 28F640C3
26
3UHOLPLQDU\
DC Characteristics, Continued
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at nominal V
, T
= +25 °C.
2. The test conditions V
Max, V
Max, V
Min, and V
Min refer to the maximum or minimum V
CC
or
V
voltage listed at the top of each column. V
Max = 3.3 V for 32-Mbit and 64-Mbit devices.
3. Automatic Power Savings (APS) reduces I
CCR
to approximately standby levels in static operation (CMOS
inputs).
4. Sampled, not 100% tested.
5. I
and I
CCWS
are specified with device de-selected. If device is read while in erase suspend, current draw
is sum of I
CCES
and I
CCR
. If the device is read while in program suspend, current draw is the sum of I
CCWS
and I
.
6. Erase and Program are inhibited when V
PP
< V
PPLK
and not guaranteed outside the valid V
PP
ranges of V
PP1
and V
.
7. Applying V
= 11.4 V–12.6 V during program/erase can only be done for a maximum of 1000 cycles on the
main blocks and 2500 cycles on the parameter blocks. V
PP
may be connected to 12 V for a total of 80 hours
maximum. See
Section 3.4
for details.
I
PPES
V
PP
Erase Suspend Current
1,4
0.2
5
μA
V
PP
= V
PP1
,
Erase Suspend in Progress
50
200
μA
V
PP
= V
PP2
(12 V),
Erase Suspend in Progress
I
PPWS
V
PP
Program Suspend Current
1,4
0.2
5
μA
V
PP
= V
PP1
Program Suspend in Progress
50
200
μA
V
PP
= V
PP2
(12 V)
Program Suspend in Progress
Sym
Parameter
V
CC
2.7 V—3.6 V
(2)
Unit
Test Conditions
V
CCQ
Note
Typ
Max
Sym
Parameter
V
CC
2.7 V — 3.6 V
Unit
Test Conditions
V
CCQ
Note
Min
Max
V
IL
Input Low Voltage
–0.4
V
CC
*0.22 V
V
V
IH
Input High Voltage
2.0
V
CCQ
+0.3 V
V
V
OL
Output Low Voltage
2
–0.10
0.10
V
V
CC
= V
CC
Min
V
CCQ
= V
CCQ
Min
I
OL
= 100
μ
A
V
OH
Output High Voltage
2
V
CCQ
–0.1 V
V
V
CC
= V
CC
Min
V
CCQ
= V
CCQ
Min
I
OH
= –100
μ
A
V
PPLK
V
PP
Lock-Out Voltage
6
1.0
V
Complete Write Protection
V
PP1
V
during Program / Erase
Operations
6
1.65
3.6
V
V
PP2
6,7
11.4
12.6
V
LKO
V
CC
Prog/Erase Lock Voltage
1.5
V
V
LKO2
V
CCQ
Prog/Erase Lock Voltage
1.2
V
相關(guān)PDF資料
PDF描述
28F640J3C-120 Intel StrataFlash Memory (J3)
28LV64A 64K (8K x 8) Low Voltage CMOS EEPROM(低壓,64K位, CMOS 并行EEPROM)
28M0U 60V 300mA MONOLITHIC DIODE ARRAY
28M0DC 60V 300mA MONOLITHIC DIODE ARRAY
28M0DS 60V 300mA MONOLITHIC DIODE ARRAY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F640C3BC80 制造商: 功能描述: 制造商:undefined 功能描述:
28F640J3C120 制造商: 功能描述: 制造商:undefined 功能描述:
28F640J3C-120 制造商: 功能描述: 制造商:undefined 功能描述:
28F640J3D75 制造商:Intel 功能描述: 制造商: 功能描述: 制造商:undefined 功能描述:
28F640J5 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:5 Volt Intel StrataFlash? Memory
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