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參數(shù)資料
| 型號： | NAND512W3A2SN6E |
| 元件分類： | PROM |
| 英文描述： | 64M X 8 FLASH 3V PROM, PDSO48 |
| 封裝： | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 |
| 文件頁數(shù)： | 48/51頁 |
| 文件大?。?/td> | 1009K |
| 代理商： | NAND512W3A2SN6E |
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Description
Numonyx SLC SP 70 nm
210403 - Rev 3
1
Description
The NAND Flash 528 Byte/264 Word page is a family of non-volatile Flash memories that
uses the single level cell (SLC) NAND technology. It is referred to as the small page family.
The devices have a density of 512 Mbits and operate with either a 1.8 or 3 V voltage supply.
The size of a page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare)
depending on whether the device has a x8 or x16 bus width.
The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or
x16 input/output bus. This interface reduces the pin count and makes it possible to migrate
to other densities without changing the footprint.
To extend the lifetime of NAND Flash devices it is strongly recommended to implement an
error correction code (ECC). The use of ECC correction allows to achieve up to 100,000
program/erase cycles for each block. A write protect pin is available to give a hardware
protection against program and erase operations.
The devices feature an open-drain Ready/Busy output that can be used to identify if the
program/erase/read (P/E/R) controller is currently active. The use of an open-drain output
allows the ready/busy pins from several memories to be connected to a single pull-up
resistor.
A Copy Back command is available to optimize the management of defective blocks. When
a page program operation fails, the data can be programmed in another page without
having to resend the data to be programmed.
The devices are available in the TSOP48 (12 x 20 mm) and VFBGA63 (9 x 11 x 1.05 mm)
packages and in two different versions:
l
No option (Chip Enable ‘care’, sequential row read enabled): the sequential row read
feature allows to download up to all the pages in a block with one read command and
addressing only the first page to read
l
With Chip Enable ‘don’t care’ feature. This enables the sharing of the bus between
more active memories that are simultaneously active as Chip Enable transitions during
latency do not stop read operations. Program and erase operations are not interrupted
by Chip Enable transitions.
They also come with the following security features:
l
OTP (one time programmable) area, which is a restricted access area where sensitive
data/code can be stored permanently. The access sequence and further details about
this feature are subject to an NDA (non disclosure agreement)
l
Serial number (unique identifier), which enables each device to be uniquely identified.
It is subject to an NDA and is, therefore, not described in the datasheet.
For more details about these security features, contact your nearest Numonyx sales office.
For information on how to order these devices refer to Table 25: Ordering information
scheme. Devices are shipped from the factory with block 0 always valid and the memory
content bits, in valid blocks, erased to ’1’.
See Table 2: Product description, for all the devices available in the family.
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND512W3A2SN6F | 制造商:Micron Technology Inc 功能描述:512MB NAND FLASH 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
| NAND512W3A2SZA6E | 制造商:Micron Technology Inc 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA Tray 制造商:Micron Technology Inc 功能描述:NAND - Trays 制造商:Micron Technology Inc 功能描述:MICNAND512W3A2SZA6E 512MB NAND FLASH 制造商:Micron Technology 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA Tray |
| NAND512W3A2SZA6F | 制造商:Micron Technology Inc 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA T/R 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel 制造商:Micron Technology 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA T/R |
| NAND512W4A0AN6E | 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| NAND512W4A0AZA6E | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 512MBIT 32MX16 12US 63VFBGA - Trays |
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